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WTM504P150LS-CH PDF预览

WTM504P150LS-CH

更新时间: 2024-11-06 14:54:07
品牌 Logo 应用领域
先科 - SWST 晶体
页数 文件大小 规格书
7页 577K
描述
功率金氧半电晶体

WTM504P150LS-CH 数据手册

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WTM504P150LS-CH  
P-Channel Enhancement Mode MOSFET  
Features  
Drain  
• Low RDS(ON)  
• AEC-Q101 Qualified  
• Surface-mounted package  
Gate  
• Halogen and Antimony Free(HAF),  
RoHS compliant  
Source  
1.Source 2.Source 3.Source 4.Gate  
5.Drain 6.Drain 7.Drain 8.Drain  
DFN5060 Plastic Package  
Key Parameters  
Parameter  
-BVDSS  
Value  
40  
Unit  
V
15 @ -VGS = 10 V  
18 @ -VGS = 4.5 V  
1.5  
RDS(ON) Max  
mΩ  
-VGS(th) typ  
Qg typ  
V
59 @ -VGS = 10 V  
nC  
Absolute Maximum Ratings (at Ta = 25unless otherwise specified)  
Parameter  
Symbol  
Unit  
V
Value  
40  
Drain-Source Voltage  
Gate-Source Voltage  
-VDS  
VGS  
V
± 20  
Tc = 25℃  
40  
25  
Drain Current  
-ID  
A
Tc = 100℃  
Peak Drain Current 1)  
Avalanche Current  
Avalanche Energy 2)  
Power Dissipation  
-IDM  
-IAS  
A
A
160  
32  
EAS  
mJ  
W
51  
PD  
35.7  
Tc = 25℃  
Operating Junction and Storage Temperature Range  
TJ,Tstg  
- 55 to + 150  
Thermal Characteristics  
Parameter  
Symbol  
RθJC  
Max.  
3.5  
Unit  
Thermal Resistance from Junction to Case  
Thermal Resistance from Junction to Ambient 3)  
1) Pulse Test: Pulse Width 100 μs, Duty Cycle 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C.  
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.1 mH, Rg = 25 Ω, -IAS = 32 A, -VGS = 10 V.  
/W  
/W  
RθJA  
55  
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.  
®
1 / 7  
Dated: 11/01/2023 Rev: 01  

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