WTM504P150LS-CH
P-Channel Enhancement Mode MOSFET
Features
Drain
• Low RDS(ON)
• AEC-Q101 Qualified
• Surface-mounted package
Gate
• Halogen and Antimony Free(HAF),
RoHS compliant
Source
1.Source 2.Source 3.Source 4.Gate
5.Drain 6.Drain 7.Drain 8.Drain
DFN5060 Plastic Package
Key Parameters
Parameter
-BVDSS
Value
40
Unit
V
15 @ -VGS = 10 V
18 @ -VGS = 4.5 V
1.5
RDS(ON) Max
mΩ
-VGS(th) typ
Qg typ
V
59 @ -VGS = 10 V
nC
Absolute Maximum Ratings (at Ta = 25℃ unless otherwise specified)
Parameter
Symbol
Unit
V
Value
40
Drain-Source Voltage
Gate-Source Voltage
-VDS
VGS
V
± 20
Tc = 25℃
40
25
Drain Current
-ID
A
Tc = 100℃
Peak Drain Current 1)
Avalanche Current
Avalanche Energy 2)
Power Dissipation
-IDM
-IAS
A
A
160
32
EAS
mJ
W
℃
51
PD
35.7
Tc = 25℃
Operating Junction and Storage Temperature Range
TJ,Tstg
- 55 to + 150
Thermal Characteristics
Parameter
Symbol
RθJC
Max.
3.5
Unit
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient 3)
1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C.
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.1 mH, Rg = 25 Ω, -IAS = 32 A, -VGS = 10 V.
℃
℃
/W
/W
RθJA
55
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.
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Dated: 11/01/2023 Rev: 01