WTM504P150L-HAF
P-Channel Enhancement Mode MOSFET
Drain
Features
• Low RDS(ON) to minimize conductive losses
• Logic level
• Low gate charge for fast power switching
• Halogen and Antimony Free(HAF),
RoHS compliant
Gate
Source
1. Source 2. Source 3. Source 4. Gate
5. Drain 6. Drain 7. Drain 8. Drain
DFN5060 Plastic Package
Applications
• POL
• Load Switch
• Motor Drives
Key Parameters
Parameter
BVDSS
Value
Unit
V
-40
15 @ VGS = -10 V
21 @ VGS = -4.5 V
-1.6
mΩ
mΩ
V
RDS(ON) Max
VGS(th) typ
Qg typ
58
nC
Absolute Maximum Ratings (Ta = 25℃ unless otherwise specified)
Parameter
Symbol
Value
40
Unit
V
Drain-Source Voltage
Gate-Source Voltage
-VDS
VGS
± 20
V
TC = 25℃
30
18
Drain Current
-ID
A
TC = 100℃
Peak Drain Current, Pulsed 1)
-IDM
-IAS
EAS
120
28
A
A
Single Pulse Avalanche Current 2)
Single Pulse Avalanche Energy 2)
117
mJ
TC = 25℃
21
8
Power Dissipation
PD
W
TC = 100℃
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
℃
Thermal Characteristics
Parameter
Symbol
RθJC
Max.
6
Unit
Thermal Resistance from Junction to Case
℃
℃
/W
/W
Thermal Resistance from Junction to Ambient 3)
1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C.
2) Limited by TJ(max), starting TJ = 25 °C, L = 0.3 mH, Rg = 25 Ω, IAS = 28 A, VGS = 10 V.
RθJA
50
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.
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Dated: 17/07/2020 Rev 01