Datasheet > WTM503P039LS-CH

WTM503P039LS-CH

更新时间： 2023-12-06 20:07:54

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	570K
描述
功率金氧半电晶体

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WTM503P039LS-CH 数据手册

WTM503P039LS-CH

P-Channel Enhancement Mode MOSFET

Features

Drain

• AEC-Q101 Qualified

• Low On-Resistance

• Low Miller Charge

Gate

• Halogen and Antimony Free(HAF),

RoHS compliant

Source

Applications

1. Source 2. Source 3. Source 4. Gate

5. Drain 6. Drain 7. Drain 8. Drain

DFN5060 Plastic Package

• Motor/Body Load Control

• Load Switch

Key Parameters

Parameter

-BV_DSS

Value

Unit

3.9 @ -V_GS= 10 V

5.6 @ -V_GS= 4.5 V

1.4

R_DS(ON)Max

mΩ

-V_GS(th)typ

Q_gtyp

146 @ -V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

-V_DS

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

T_c= 100℃

Drain Current

-I_D

Peak Drain Current, Pulsed ¹⁾

Single-Pulse Avalanche Current

Single-Pulse Avalanche Energy ²⁾

Power Dissipation

-I_DM

-I_AS

380

62.3

E_AS

194

℃

P_D

54.5

T_c= 25℃

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

2.3

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25°C, L = 0.1 mH, R_g= 25 Ω, -I_AS= 62.3 A, V_GS= 10 V.

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 13/04/2023 Rev: 01

12 3 4 5 6 7

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