Datasheet > WTM503N015LS

WTM503N015LS

更新时间： 2024-11-06 14:55:51

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	861K
描述
功率金氧半电晶体

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数据手册

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WTM503N015LS 数据手册

WTM503N015LS-HAF

N-Channel Enhancement Mode MOSFET

Drain

Features

• Low R_DS(ON)

• Low Miller Charge

Gate

• Halogen and Antimony Free(HAF),

RoHS compliant

Source

1.Source 2.Source 3.Source 4.Gate

5.Drain 6.Drain 7.Drain 8.Drain

DFN5060 Plastic Package

Application

• Motor/Body Load Control

• Load Switch

• DC-DC converters and Off-line UPS

Key Parameters

Parameter

BV_DSS

Value

Unit

1.8 @ V_GS= 10 V

2.5 @ V_GS= 4.5 V

1.6

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

163 @ V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Symbol

V_DS

Value

Unit

Parameter

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

T_c= 100℃

110

I_D

Continuous Drain Current

Peak Drain Current, Pulsed ¹⁾

Single Pulse Avalanche Current

Single Pulse Avalanche Energy ²⁾

I_DM

I_AS

420

48.7

119

E_AS

T_c= 25℃

T_a= 25℃

2.5

P_tot

Power Dissipation

T_J, T_stg

- 55 to + 150

Operating Junction and Storage Temperature Range

℃

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

3.6

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%,Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

^2).Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, I_AS= 48.7 A, V_GS= 10 V.

R_θJA

^{3) .}Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 18/11/2022 Rev: 03

12 3 4 5 6 7

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