Datasheet > TPC8223-H(TE12L,Q)

TPC8223-H(TE12L,Q)

更新时间： 2024-11-21 20:10:31

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	255K
描述
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,9A I(D),SO

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TPC8223-H(TE12L,Q) 技术参数

TPC8223-H

MOSFETs Silicon N-Channel MOS (U-MOS-H)

TPC8223-H

1. Applications

•

High-Efficiency DC-DC Converters

Notebook PCs

Mobile Handsets

2. Features

(1) Small, thin package

(2) High-speed switching

(3) Small gate change: QSW = 3.6 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 17 mΩ (typ.) (VGS = 4.5 V)

(5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)

(6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)

3. Packaging and Internal Circuit

1, 3: Source

2, 4: Gate

5, 6, 7, 8: Drain

SOP-8

2011-07-01

Rev.3.0

12 3 4 5 6 7...9

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