Datasheet > TPC8305_06

TPC8305_06

更新时间： 2024-11-21 08:40:07

品牌	Logo	应用领域
东芝 - TOSHIBA		电池 PC
页数	文件大小	规格书
7页	1064K
描述
Lithium Ion Battery ApplicationsPortable Equipment ApplicationsNotebook PC Applications

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中文翻译

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数据手册

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TPC8305_06 数据手册

TPC8305

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII)

TPC8305

Lithium Ion Battery Applications

Unit: mm

Portable Equipment Applications

Notebook PC Applications

Small footprint due to small and thin package

Low drain−source ON resistance : R

= 24 mΩ (typ.)

DS (ON)

High forward transfer admittance : |Y | = 12 S (typ.)

Low leakage current : I

= −10 µA (max) (V

= −20 V)

DSS

Enhancement mode : V = −0.5~ −1.2 V (V

= −10 V, I = −1mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−20

±12

−5

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

JEDEC

JEITA

―

(Note 1)

Drain curren

Pulse

−20

Single-device

operation

TOSHIBA

2-6J1E

1.5

1.0

D (1)

Drain power

dissipation

(t = 10s)

(Note 3a)

Weight: 0.08 g (typ.)

Single-device value

at dual operation

(Note 3b)

(Note 2a)

D(2)

D (1)

D (2)

Circuit Configuration

Single-device

operation

0.75

0.45

Drain power

dissipation

(t = 10s)

(Note 3a)

Single-device value

at dual operation

(Note 3b)

(Note 2b)

Single pulse avalanche energy

(Note 4)

32.5

Avalanche current

(Note 1)

−5

Repetitive avalanche energy

Single-device value at operation

(Note 2a, Note 3b, Note 5)

0.10

Channel temperature

150

°C

Storage temperature range

stg

−55~150

Note: (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5): See the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Please handle with caution.

2006-11-16

12 3 4 5 6 7

中文翻译

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与TPC8305_06相关器件

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TPC8401	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U−MOSII)
TPC8402	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U−MOSII)
TPC8402(TE12L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,30V V(BR)DSS,4.5A I(D),SO
TPC8403	TOSHIBA	获取价格	Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII)
TPC8403_06	TOSHIBA	获取价格	Motor Drive Applications Notebook PC Applications Portable Equipment Applications
TPC8405	TOSHIBA	获取价格	Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel
TPC8405(TE12L.Q)	TOSHIBA	获取价格	6000mA, 30V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
TPC8406-H	TOSHIBA	获取价格	Field Effect Transistor Silicon P/N-Channel M
TPC8407	TOSHIBA	获取价格	MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)
TPC8407(TE12L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,30V V(BR)DSS,9A I(D),SO

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