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TPC8407(TE12L)

更新时间: 2024-10-02 19:24:43
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
14页 380K
描述
TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,30V V(BR)DSS,9A I(D),SO

TPC8407(TE12L) 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.69最大漏极电流 (Abs) (ID):9 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs):1.5 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

TPC8407(TE12L) 数据手册

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TPC8407  
MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)  
TPC8407  
1. Applications  
Motor Drivers  
CCFL Inverters  
Mobile Equipments  
2. Features  
(1) Small footprint due to a small and thin package  
(2) High speed switching  
(3) Low drain-source on-resistance  
P-channel RDS(ON) = 18 m(typ.) (VGS = -10 V),  
N-channel RDS(ON) = 14 m(typ.) (VGS = 10 V)  
(4) Low leakage current  
P-channel IDSS = -10 µA (VDS = -30 V),  
N-channel IDSS = 10 µA (VDS = 30 V)  
(5) Enhancement mode  
P-channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA),  
N-channel Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)  
3. Packaging and Internal Circuit  
1: Source 1  
2: Gate 1  
3: Source 2  
4: Gate 2  
5, 6: Drain 2  
7, 8: Drain 1  
SOP-8  
2011-03-11  
Rev.1.0  
1

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TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,17A I(D),SO