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TPC8A02-H(TE12L,Q) PDF预览

TPC8A02-H(TE12L,Q)

更新时间： 2024-10-02 15:54:55
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
8页 253K
描述
MOSFET N-CH SBD 16A SOP8 2-6J1B

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TPC8A02-H(TE12L,Q) 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：unknown风险等级：5.75
Base Number Matches：1

TPC8A02-H(TE12L,Q) 数据手册

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TPC8A02-H  
ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode  
Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS Ⅲ)  
TPC8A02-H  
High-Efficiency DC/DC Converter Applications  
Unit: mm  
Notebook PC Applications  
Portable-Equipment Applications  
•
Built-in Schottky barrier diode  
Low forward voltage: VDSF = 0.6V (max)  
High-speed switching.  
•
•
•
•
•
•
Small gate charge.: Q  
＝ 11 nC (typ.)  
SW  
Low drain-source ON-resistance: R  
= 4.3 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 40 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (max) (V  
= 30 V)  
DSS  
DS  
Enhancement mode: V = 1.1 to 2.3 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
1,2,3  
4
SOURCE，ANODE  
GATE  
Absolute Maximum Ratings (Ta = 25°C)  
5,6,7,8  
DRAIN，CATHODE  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
JEDEC  
JEITA  
―
―
V
30  
30  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
TOSHIBA  
2-6J1B  
V
±20  
16  
GSS  
Weight: 0.085 g (typ.)  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
48  
DP  
Drain power dissipation (t = 10 s)  
(Note 2a)  
P
1.9  
1.0  
W
W
D
D
Circuit Configuration  
Drain power dissipation (t = 10 s)  
(Note 2b)  
P
8
7
6
5
Single-pulse avalanche energy  
(Note 3)  
E
166  
16  
mJ  
A
AS  
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
0.11  
mJ  
AR  
(Note 2a) (Note 4)  
Channel temperature  
T
150  
°C  
°C  
ch  
1
2
3
4
Storage temperature range  
T
−55 to 150  
stg  
Note: For Notes 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care. Schottky barrier diodes have  
large-reverse-current-leakage characteristic compared to other rectifier products. This current leakage combined with  
improper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into  
consideration during design.  
1
2009-09-29  
12345678

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