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TPC8A06-H PDF预览

TPC8A06-H

更新时间： 2024-10-02 21:16:15
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
8页 237K
描述
TRANSISTOR 12000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, 2-6J1B, 8 PIN, FET General Purpose Small Signal

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TPC8A06-H 技术参数

生命周期：Lifetime Buy包装说明：SMALL OUTLINE, R-PDSO-G8
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.38
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：12 A最大漏源导通电阻：0.0129 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：80 pF
JESD-30 代码：R-PDSO-G8元件数量：1
端子数量：8工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

TPC8A06-H 数据手册

 浏览型号TPC8A06-H的Datasheet PDF文件第2页浏览型号TPC8A06-H的Datasheet PDF文件第3页浏览型号TPC8A06-H的Datasheet PDF文件第4页浏览型号TPC8A06-H的Datasheet PDF文件第5页浏览型号TPC8A06-H的Datasheet PDF文件第6页浏览型号TPC8A06-H的Datasheet PDF文件第7页 
TPC8A06-H  
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode  
Silicon N-Channel MOS Type (U-MOS V-H)  
TPC8A06-H  
High Efficiency DC-DC Converter Applications  
Unit: mm  
Notebook PC Applications  
Portable Equipment Applications  
•
Built-in schottky barrier diode  
Low forward voltage: VDSF = 0.6 V (max)  
High-speed switching  
•
•
•
Small gate charge: Q  
= 4.5 nC (typ.)  
SW  
Low drain-source ON-resistance:  
= 9.2 mΩ (typ.)( V  
R
= 4.5 V)  
GS  
DS (ON)  
•
•
•
High forward transfer admittance: |Y | = 37 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (max) (V  
= 30 V)  
DSS  
DS  
Enhancement mode: V = 1.3 to 2.3 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
30  
30  
V
V
V
DSS  
JEDEC  
JEITA  
⎯
⎯
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
DGR  
GS  
V
±20  
12  
GSS  
TOSHIBA  
2-6J1B  
DC  
(Note 1)  
I
D
Drain current  
A
Weight: 0.085g (typ.)  
Pulsed (Note 1)  
I
48  
DP  
Drain power dissipation  
Drain power dissipation  
(t = 10 s)  
(Note 2a)  
(t = 10 s)  
(Note 2b)  
P
1.9  
1.0  
W
W
D
D
Circuit Configuration  
P
8
7
6
5
Single-pulse avalanche energy  
(Note 3)  
E
94  
12  
mJ  
A
AS  
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
0.10  
mJ  
AR  
(Tc=25℃) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
1
2
3
4
−55 to 150  
Storage temperature range  
stg  
Note: For Notes 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability  
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.  
reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2009-06-05  
12345678

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