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TPCA8004-H_06 PDF预览

TPCA8004-H_06

更新时间： 2024-11-21 06:01:51
品牌 Logo 应用领域
东芝 - TOSHIBA 转换器
页数 文件大小 规格书
7页 457K
描述
High Efficiency DC／DC Converter Applications

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中文翻译

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TPCA8004-H_06 数据手册

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TPCA8004-H  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)  
TPCA8004-H  
High Efficiency DC／DC Converter Applications  
Unit: mm  
Notebook PC Applications  
0.4±0.1  
1.27  
0.5±0.1  
0.05  
M A  
5
8
Portable Equipment Applications  
0.15±0.05  
•
•
•
•
•
•
•
Small footprint due to a small and thin package  
High speed switching  
4
0.595  
A
1
Small gate charge: Q  
SW  
=12.7 nC (typ.)  
5.0±0.2  
Low drain-source ON-resistance: R  
DS (ON)  
= 3.5 mΩ (typ.)  
0.95±0.05  
0.166±0.05  
High forward transfer admittance: |Y | =80 S (typ.)  
fs  
0.05  
S
S
Low leakage current: I  
= 10 µA (max) (V  
= 30 V)  
= 10 V, I = 1 mA)  
DSS  
DS  
1.1±0.2  
1
4
Enhancement mode: V = 1.1 to 2.3 V (V  
th DS  
D
4.25±0.2  
Absolute Maximum Ratings (Ta = 25°C)  
8
5
0.8±0.1  
1,2,3：SOURCE  
5,6,7,8：DRAIN  
4：GATE  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
30  
30  
V
V
V
DSS  
JEDEC  
―
―
V
DGR  
Drain-gate voltage (R  
= 20 kΩ)  
GS  
JEITA  
V
±20  
40  
Gate-source voltage  
GSS  
TOSHIBA  
2-5Q1A  
DC  
(Note 1)  
I
D
Drain current  
A
Weight: 0.069 g (typ.)  
Pulsed (Note 1)  
I
120  
45  
DP  
Drain power dissipation  
Drain power dissipation  
(Tc=25℃)  
(t = 10 s)  
(Note 2a)  
(t = 10 s)  
(Note 2b)  
P
W
W
D
D
P
2.8  
1.6  
Circuit Configuration  
Drain power dissipation  
P
W
D
8
7
6
5
Single-pulse avalanche energy  
(Note 3)  
E
208  
40  
mJ  
A
AS  
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
4.5  
mJ  
AR  
(Tc=25℃) (Note 4)  
T
T
150  
°C  
°C  
1
2
3
4
Channel temperature  
ch  
−55 to 150  
Storage temperature range  
stg  
Note: For Notes 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2006-11-16  
1234567

中文翻译

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