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TPCA8006-H(TE12LQM PDF预览

TPCA8006-H(TE12LQM

更新时间： 2024-11-22 09:52:47
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
7页 207K
描述
MOSFET N-CH 100V 18A SOP-8 ADV

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TPCA8006-H(TE12LQM 数据手册

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TPCA8006-H  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVII)  
TPCA8006-H  
Switching Regulator Applications  
Unit: mm  
Motor Drive Applications  
0.4±0.1  
1.27  
0.05  
M A  
5
8
DC／DC Converter Applications  
0.15±0.05  
•
•
•
Small footprint due to a small and thin package  
High speed switching  
4
0.595  
A
1
Low drain-source ON-resistance  
R
= 41 mΩ (typ.) (V =10V, I =9A)  
G D  
:
DS (ON)  
5.0±0.2  
•
•
•
High forward transfer admittance: |Y | = 15 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (max) (V  
= 100 V)  
DSS  
DS  
0.05  
S
S
Enhancement mode: V = 3.0 to 5.0 V (V  
= 10 V, I = 1 mA)  
D
1
4
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
4.25±0.2  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
8
5
0.8±0.1  
1,2,3：SOURCE  
5,6,7,8：DRAIN  
4：GATE  
V
100  
100  
±20  
18  
V
V
V
DSS  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
JEDEC  
―
―
DGR  
GS  
V
GSS  
JEITA  
DC  
(Note 1)  
I
D
TOSHIBA  
2-5Q1A  
Drain current  
A
Pulsed (Note 1)  
I
36  
DP  
Weight: 0.069 g (typ.)  
Drain power dissipation  
Drain power dissipation  
(Tc=25℃)  
(t = 10 s)  
(Note 2a)  
(t = 10 s)  
(Note 2b)  
P
45  
W
W
D
D
P
2.8  
1.6  
Circuit Configuration  
Drain power dissipation  
P
W
D
8
7
6
5
Single-pulse avalanche energy  
(Note 3)  
E
224  
18  
mJ  
A
AS  
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
4.5  
mJ  
AR  
(Note 2a) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
1
2
3
4
−55 to 150  
Storage temperature range  
stg  
Note: For Notes 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2006-11-20  
1234567

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