5秒后页面跳转
TPCA8010-H(TE12L,Q) PDF预览

TPCA8010-H(TE12L,Q)

更新时间: 2024-11-22 05:37:51
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
7页 215K
描述
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,5.5A I(D),SO

TPCA8010-H(TE12L,Q) 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.84配置:Single
最大漏极电流 (Abs) (ID):5.5 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):45 W
子类别:FET General Purpose Power表面贴装:YES

TPCA8010-H(TE12L,Q) 数据手册

 浏览型号TPCA8010-H(TE12L,Q)的Datasheet PDF文件第2页浏览型号TPCA8010-H(TE12L,Q)的Datasheet PDF文件第3页浏览型号TPCA8010-H(TE12L,Q)的Datasheet PDF文件第4页浏览型号TPCA8010-H(TE12L,Q)的Datasheet PDF文件第5页浏览型号TPCA8010-H(TE12L,Q)的Datasheet PDF文件第6页浏览型号TPCA8010-H(TE12L,Q)的Datasheet PDF文件第7页 
TPCA8010-H  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOS)  
TPCA8010-H  
High-Speed Switching Applications  
Unit: mm  
Switching Regulator Applications  
DC-DC Converter Applications  
0.4±0.1  
1.27  
0.05  
M A  
5
8
0.15±0.05  
Small footprint due to a small and thin package  
High-speed switching  
4
0.595  
A
1
Small gate charge: Q  
= 3.7 nC (typ.)  
SW  
Low drain-source ON-resistance: R  
= 0.38Ω (typ.)  
DS (ON)  
5.0±0.2  
High forward transfer admittance: |Y | = 3.9S (typ.)  
fs  
Low leakage current: I  
= 100 μA (max) (V  
= 200V)  
DSS  
DS  
0.05  
S
Enhancement mode: V = 2.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
S
1
4
Absolute Maximum Ratings (Ta = 25°C)  
4.25±0.2  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
8
5
0.8±0.1  
V
200  
200  
±20  
5.5  
11  
V
V
V
DSS  
1, 2, 3 : SOURCE  
4 : GATE  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
DGR  
GS  
5, 6, 7, 8 : DRAIN  
V
GSS  
JEDEC  
DC  
(Note 1)  
I
D
Drain current  
A
JEITA  
Pulsed (Note 1)  
I
DP  
TOSHIBA  
2-5Q1A  
Drain power dissipation  
Drain power dissipation  
(Tc=25)  
(t = 10 s)  
(Note 2a)  
(t = 10 s)  
(Note 2b)  
P
45  
W
W
D
D
Weight: 0.069 g (typ.)  
P
2.8  
1.6  
Drain power dissipation  
P
W
D
Circuit Configuration  
Single-pulse avalanche energy  
(Note 3)  
E
19  
5.5  
1.5  
mJ  
A
AS  
8
7
6
5
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
mJ  
AR  
(Tc=25) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
55 to 150  
Storage temperature range  
stg  
1
2
3
4
Note: For Notes 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability  
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2009-12-21  

与TPCA8010-H(TE12L,Q)相关器件

型号 品牌 获取价格 描述 数据表
TPCA8010-H_09 TOSHIBA

获取价格

High-Speed Switching Applications
TPCA8011-H TOSHIBA

获取价格

High Efficiency DC/DC Converter Applications
TPCA8011-H(TE12L,Q) TOSHIBA

获取价格

TPCA8011-H(TE12L,Q)
TPCA8012-H TOSHIBA

获取价格

Bipolar Small-Signal Transistors
TPCA8014-H TOSHIBA

获取价格

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
TPCA8014-H(TE12L,Q) TOSHIBA

获取价格

Power Field-Effect Transistor
TPCA8014-H(TE12LQM) TOSHIBA

获取价格

Power Field-Effect Transistor
TPCA8014-H_06 TOSHIBA

获取价格

High-Efficiency DC/DC Converter Applications
TPCA8015-H TOSHIBA

获取价格

High-Efficiency DC/DC Converter Applications
TPCA8016-H TOSHIBA

获取价格

High-Efficiency DC/DC Converter Applications