Datasheet > TPCA8025(TE12L1)

TPCA8025(TE12L1)

更新时间： 2024-11-21 21:11:27

品牌	Logo	应用领域
东芝 - TOSHIBA		PC
页数	文件大小	规格书
7页	228K
描述
TPCA8025(TE12L1)

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TPCA8025(TE12L1) 技术参数

生命周期：	Lifetime Buy	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

TPCA8025(TE12L1) 数据手册

TPCA8025

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)

TPCA8025

Lithium-Ion Battery Applications

Notebook PC Applications

Unit: mm

0.4 ± 0.1

1.27

0.05 M A

Portable Equipment Applications

0.15 ± 0.05

•

Small footprint due to a small and thin package

Low drain-source ON-resistance: R = 2.7 mΩ (typ.)

DS (ON)

0.595

High forward transfer admittance: |Y | = 80S (typ.)

Low leakage current: I

= 10 μA (max) (V

= 30 V)

DSS

Enhancement mode: V = 1.3 to 2.5 V (V

= 10 V, I = 1 mA)

5.0 ± 0.2

0.05 S

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

DSS

4.25 ± 0.2

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

±20

GSS

(Note 1)

Drain current

Pulsed (Note 1)

120

1,2,3: SORCE

5,6,7,8: DRAIN

4: GATE

Drain power dissipation (Tc = 25℃)

Drain power dissipation

(t = 10 s)

(Note 2a)

(t = 10 s)

(Note 2b)

2.8

1.6

JEDEC

JEITA

⎯

Drain power dissipation

TOSHIBA

2-5Q1A

Single pulse avalanche energy

(Note 3)

Weight: 0.069 g (typ.)

208

Avalanche current

Circuit Configuration

Repetitive avalanche energy

4.5

(Tc = 25℃) (Note 4)

150

°C

Channel temperature

−55 to 150

Storage temperature range

stg

Note: For Notes 1 to 4, refer to the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

2008-06-27

12 3 4 5 6 7

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