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TPCA8046-H(TE12L,Q) PDF预览

TPCA8046-H(TE12L,Q)

更新时间： 2024-11-25 21:00:23
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
7页 193K
描述
TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,38A I(D),SO

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TPCA8046-H(TE12L,Q) 技术参数

是否Rohs认证： 符合生命周期：End Of Life
包装说明：,Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.76
配置：Single最大漏极电流 (Abs) (ID)：38 A
FET 技术：METAL-OXIDE SEMICONDUCTOR工作模式：ENHANCEMENT MODE
最高工作温度：150 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：45 W子类别：FET General Purpose Power
表面贴装：YESBase Number Matches：1

TPCA8046-H(TE12L,Q) 数据手册

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TPCA8046-H  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)  
TPCA8046-H  
Switching Regulator Applications  
Unit: mm  
Motor Drive Applications  
0.4 ± 0.1  
1.27  
8
0.05 M A  
DC-DC Converter Applications  
5
0.15 ± 0.05  
•
•
•
•
•
•
•
Small footprint due to a small and thin package  
High-speed switching  
4
0.595  
A
Small gate charge: Q  
= 15 nC (typ.)  
1
SW  
Low drain-source ON-resistance: R  
= 3.5 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 112 S (typ.)  
fs  
5.0 ± 0.2  
Low leakage current: I  
= 10 μA (max) (V  
= 40 V)  
DSS  
DS  
Enhancement mode: V = 1.3 to 2.3 V (V  
= 10 V, I = 0.5 mA)  
D
th  
DS  
0.05 S  
S
4
1
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
4.25 ± 0.2  
V
40  
40  
V
V
V
DSS  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
DGR  
GS  
8
5
V
±20  
38  
GSS  
DC  
(Note 1)  
I
D
1,2,3:SOURCE 4:GATE  
5,6,7,8:DRAIN  
Drain current  
A
Pulsed (Note 1)  
I
114  
45  
DP  
JEDEC  
JEITA  
⎯
⎯
Drain power dissipation (Tc = 25℃)  
P
W
W
D
D
Drain power dissipation  
(t = 10 s)  
(Note 2a)  
(t = 10 s)  
(Note 2b)  
P
2.8  
1.6  
TOSHIBA  
2-5Q1A  
Drain power dissipation  
P
W
Weight: 0.069 g (typ.)  
D
Single-pulse avalanche energy  
(Note 3)  
E
134  
38  
mJ  
A
AS  
Circuit Configuration  
Avalanche current  
I
AR  
Repetitive avalanche energy  
8
7
6
5
E
4.34  
mJ  
AR  
(Tc = 25℃) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
−55 to 150  
Storage temperature range  
stg  
Note: For Notes 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
1
2
3
4
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2009-05-29  
1234567

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