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TPCA8048-H PDF预览

TPCA8048-H

更新时间: 2024-11-05 08:40:07
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体转换器稳压器开关晶体管功率场效应晶体管脉冲光电二极管电机驱动
页数 文件大小 规格书
7页 197K
描述
Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications

TPCA8048-H 技术参数

生命周期:Active包装说明:SMALL OUTLINE, S-PDSO-F5
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.69
Is Samacsys:N雪崩能效等级(Eas):88 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):35 A
最大漏源导通电阻:0.0071 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-PDSO-F5元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):105 A认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

TPCA8048-H 数据手册

 浏览型号TPCA8048-H的Datasheet PDF文件第2页浏览型号TPCA8048-H的Datasheet PDF文件第3页浏览型号TPCA8048-H的Datasheet PDF文件第4页浏览型号TPCA8048-H的Datasheet PDF文件第5页浏览型号TPCA8048-H的Datasheet PDF文件第6页浏览型号TPCA8048-H的Datasheet PDF文件第7页 
TPCA8048-H  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H)  
TPCA8048-H  
Switching Regulator Applications  
Unit: mm  
Motor Drive Applications  
0.4 ± 0.1  
1.27  
8
0.05 M A  
DC-DC Converter Applications  
5
0.15 ± 0.05  
Small footprint due to a small and thin package  
High-speed switching  
4
0.595  
A
Small gate charge: Q  
= 19 nC (typ.)  
1
SW  
Low drain-source ON-resistance: R  
= 4.3 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 118 S (typ.)  
fs  
5.0 ± 0.2  
Low leakage current: I  
= 10 μA (max) (V  
= 60 V)  
DSS  
DS  
Enhancement mode: V = 1.3 to 2.3 V (V  
= 10 V, I = 1.0 mA)  
D
th  
DS  
0.05 S  
S
4
1
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
4.25 ± 0.2  
V
60  
60  
V
V
V
DSS  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
DGR  
GS  
8
5
V
±20  
35  
GSS  
DC  
(Note 1)  
I
D
1,2,3:SOURCE 4:GATE  
5,6,7,8:DRAIN  
Drain current  
A
Pulsed (Note 1)  
I
105  
45  
DP  
JEDEC  
JEITA  
Drain power dissipation (Tc = 25)  
P
W
W
D
D
Drain power dissipation  
(t = 10 s)  
(Note 2a)  
P
2.8  
1.6  
TOSHIBA  
2-5Q1A  
Drain power dissipation  
(t = 10 s)  
(Note 2b)  
P
W
D
Weight: 0.069 g (typ.)  
Single-pulse avalanche energy  
(Note 3)  
E
88  
35  
mJ  
A
AS  
Circuit Configuration  
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
2.46  
mJ  
AR  
8
7
6
5
(Tc = 25) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
55 to 150  
Storage temperature range  
stg  
Note: For Notes 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
1
2
3
4
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the  
appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2009-07-02  

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