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TPCA8053-H PDF预览

TPCA8053-H

更新时间: 2024-11-09 12:33:23
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
7页 191K
描述
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H)

TPCA8053-H 技术参数

生命周期:Active包装说明:SMALL OUTLINE, S-PDSO-F5
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:1.47
Is Samacsys:N雪崩能效等级(Eas):16 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):15 A
最大漏极电流 (ID):15 A最大漏源导通电阻:0.024 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):90 pF
JESD-30 代码:S-PDSO-F5元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):30 W最大脉冲漏极电流 (IDM):45 A
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

TPCA8053-H 数据手册

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TPCA8053-H  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H)  
TPCA8053-H  
Switching Regulator Applications  
Unit: mm  
Motor Drive Applications  
0.4 ± 0.1  
1.27  
8
0.05 M A  
DC-DC Converter Applications  
5
0.15 ± 0.05  
Small footprint due to a small and thin package  
High-speed switching  
4
0.595  
A
Small gate charge: Q  
= 6.9 nC (typ.)  
1
SW  
Low drain-source ON-resistance: R  
= 13.9 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 46 S (typ.)  
fs  
5.0 ± 0.2  
Low leakage current: I  
= 10 μA (max) (V  
= 60 V)  
DSS  
DS  
Enhancement mode: V = 1.3 to 2.3 V (V  
= 10 V, I = 0.2 mA)  
D
th  
DS  
0.05 S  
S
4
1
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
4.25 ± 0.2  
V
60  
60  
V
V
V
DSS  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
DGR  
GS  
8
5
V
±20  
15  
GSS  
DC  
(Note 1)  
I
D
1,2,3:SOURCE 4:GATE  
5,6,7,8:DRAIN  
Drain current  
A
Pulsed (Note 1)  
I
45  
DP  
JEDEC  
JEITA  
Drain power dissipation (Tc = 25)  
P
30  
W
W
D
D
Drain power dissipation  
(t = 10 s)  
P
2.8  
1.6  
(Note 2a)  
TOSHIBA  
2-5Q1A  
Drain power dissipation  
(t = 10 s)  
P
W
D
Weight: 0.069 g (typ.)  
(Note 2b)  
Single-pulse avalanche energy  
(Note 3)  
E
16  
15  
mJ  
A
AS  
Circuit Configuration  
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
1.53  
mJ  
AR  
8
7
6
5
(Tc = 25) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
55 to 150  
Storage temperature range  
stg  
Note: For Notes 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
1
2
3
4
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the  
appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2009-08-19  

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