Datasheet > TPCA8102_06

TPCA8102_06

更新时间： 2022-09-17 23:16:03

品牌	Logo	应用领域
东芝 - TOSHIBA		电池电脑便携式便携式设备 PC
页数	文件大小	规格书
7页	291K
描述
Lithium Ion Battery Applications Notebook pc Applications Notebook PC Applications Portable Equipment Applications

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TPCA8102_06 数据手册

TPCA8102

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)

TPCA8102

Lithium Ion Battery Applications

Notebook PC Applications

Unit: mm

0.4±0.1

1.27

0.05

M A

Portable Equipment Applications

0.15±0.05

•

Small footprint due to small and thin package

Low drain-source ON resistance: R = 4.5mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 60S (typ.)

0.595

Low leakage current: I

= −10 µA (max) (V

= −30 V)

DSS

5.0±0.2

Enhancement mode: V = −0.8 to −2.0 V (V

= −10 V, I = −1 mA)

th DS

0.05

4.25±0.2

Absolute Maximum Ratings (Ta = 25°C)

0.8±0.1

1,2,3:SOURCE

4:GATE

5,6,7,8:DRAIN

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−30

±20

− 40

−120

DSS

JEDEC

JEITA

⎯

DGR

Drain-gate voltage (R

= 20 kΩ)

Gate-source voltage

GSS

TOSHIBA

2-5Q1A

(Note 1)

Drain current

Pulsed (Note 1)

Weight: 0.076 g (typ.)

Drain power dissipation (Tc=25℃)

Drain power dissipation

(t = 10 s)

2.8

1.6

Circuit Configuration

(Note 2a)

(t = 10 s)

(Note 2b)

Drain power dissipation

Single pulse avalanche energy

(Note 3)

208

− 40

4.5

Avalanche current

Repetitive avalanche energy

(Tc=25℃) (Note 4)

150

°C

Channel temperature

−55 to 150

Storage temperature range

stg

Note: For Notes 1 to 4, refer to the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2006-11-16

12 3 4 5 6 7

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