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TPCA8049-H(TE12L) PDF预览

TPCA8049-H(TE12L)

更新时间： 2024-11-21 21:20:15
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
7页 197K
描述
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,28A I(D),SO

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TPCA8049-H(TE12L) 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：,Reach Compliance Code：unknown
风险等级：5.84配置：Single
最大漏极电流 (Abs) (ID)：28 AFET 技术：METAL-OXIDE SEMICONDUCTOR
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：45 W
子类别：FET General Purpose Power表面贴装：YES
Base Number Matches：1

TPCA8049-H(TE12L) 数据手册

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TPCA8049-H  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)  
TPCA8049-H  
Switching Regulator Applications  
Unit: mm  
Motor Drive Applications  
0.4 ± 0.1  
1.27  
8
0.05 M A  
DC-DC Converter Applications  
5
0.15 ± 0.05  
•
•
•
•
•
•
•
Small footprint due to a small and thin package  
High-speed switching  
4
0.595  
A
Small gate charge: Q  
= 13 nC (typ.)  
1
SW  
Low drain-source ON-resistance: R  
= 6.6 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 88 S (typ.)  
fs  
5.0 ± 0.2  
Low leakage current: I  
= 10 μA (max) (V  
= 60 V)  
DSS  
DS  
Enhancement mode: V = 1.3 to 2.3 V (V  
= 10 V, I = 0.5 mA)  
D
th  
DS  
0.05 S  
S
4
1
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
4.25 ± 0.2  
V
60  
60  
V
V
V
DSS  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
DGR  
GS  
8
5
V
±20  
28  
GSS  
DC  
(Note 1)  
I
D
1,2,3:SOURCE 4:GATE  
5,6,7,8:DRAIN  
Drain current  
A
Pulsed (Note 1)  
I
84  
DP  
JEDEC  
JEITA  
⎯
⎯
Drain power dissipation (Tc = 25℃)  
P
45  
W
W
D
D
Drain power dissipation  
(t = 10 s)  
P
2.8  
1.6  
(Note 2a)  
TOSHIBA  
2-5Q1A  
Drain power dissipation  
(t = 10 s)  
P
W
D
Weight: 0.069 g (typ.)  
(Note 2b)  
Single-pulse avalanche energy  
(Note 3)  
E
57  
28  
mJ  
A
AS  
Circuit Configuration  
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
2.85  
mJ  
AR  
8
7
6
5
(Tc = 25℃) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
−55 to 150  
Storage temperature range  
stg  
Note: For Notes 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
1
2
3
4
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the  
appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2009-07-03  
1234567

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