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TPCA8042(TE12L,Q) PDF预览

TPCA8042(TE12L,Q)

更新时间: 2024-11-22 04:58:39
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
7页 172K
描述
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,45A I(D),SO

TPCA8042(TE12L,Q) 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.84Is Samacsys:N
配置:Single最大漏极电流 (Abs) (ID):45 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):45 W子类别:FET General Purpose Power
表面贴装:YESBase Number Matches:1

TPCA8042(TE12L,Q) 数据手册

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TPCA8042  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS)  
TPCA8042  
Lithium-Ion Battery Applications  
Notebook PC Applications  
Unit: mm  
0.4 ± 0.1  
1.27  
8
0.05 M A  
Portable Equipment Applications  
5
0.15 ± 0.05  
Small footprint due to a small and thin package  
Low drain-source ON-resistance: R = 2.6 m(typ.)  
DS (ON)  
4
0.595  
A
1
High forward transfer admittance: |Y | =94 S (typ.)  
fs  
Low leakage current: I  
= 10 μA (max) (V  
= 30 V)  
DSS  
DS  
Enhancement mode: V = 1.3 to 2.5 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
5.0 ± 0.2  
0.05 S  
S
4
1
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
4.25 ± 0.2  
V
30  
30  
V
V
V
DSS  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
DGR  
GS  
8
5
V
±20  
45  
GSS  
DC  
(Note 1)  
I
D
1,2,3: SOURCE  
5,6,7,8: DRAIN  
4: GATE  
Drain current  
A
Pulsed (Note 1)  
I
135  
45  
DP  
Drain power dissipation  
Drain power dissipation  
(Tc=25)  
(t = 10 s)  
(Note 2a)  
(t = 10 s)  
(Note 2b)  
P
W
W
D
D
JEDEC  
JEITA  
P
2.8  
1.6  
TOSHIBA  
2-5Q1A  
Drain power dissipation  
P
W
D
Weight: 0.069 g (typ.)  
Single-pulse avalanche energy  
(Note 3)  
E
263  
45  
mJ  
A
AS  
Circuit Configuration  
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
4.5  
mJ  
AR  
(Tc=25) (Note 4)  
8
7
6
5
T
T
150  
°C  
°C  
Channel temperature  
ch  
55 to 150  
Storage temperature range  
stg  
Note: For Notes 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings. Please design the appropriate  
1
2
3
4
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating  
Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2008-06-24  

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