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TPCA8045-H PDF预览

TPCA8045-H

更新时间： 2024-11-21 08:40:07
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体转换器晶体管功率场效应晶体管开关脉冲光电二极管电脑DC-DC转换器便携式便携式设备PC
页数 文件大小 规格书
7页 200K
描述
High-Effciency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications

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中文翻译

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TPCA8045-H 技术参数

生命周期：Active包装说明：SMALL OUTLINE, S-PDSO-F5
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.72
Is Samacsys：N雪崩能效等级（Eas）：196 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：40 V最大漏极电流 (ID)：46 A
最大漏源导通电阻：0.0041 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：S-PDSO-F5元件数量：1
端子数量：5工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：SQUARE
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：138 A认证状态：Not Qualified
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

TPCA8045-H 数据手册

 浏览型号TPCA8045-H的Datasheet PDF文件第2页浏览型号TPCA8045-H的Datasheet PDF文件第3页浏览型号TPCA8045-H的Datasheet PDF文件第4页浏览型号TPCA8045-H的Datasheet PDF文件第5页浏览型号TPCA8045-H的Datasheet PDF文件第6页浏览型号TPCA8045-H的Datasheet PDF文件第7页 
TPCA8045-H  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)  
TPCA8045-H  
High-Efficiency DC-DC Converter Applications  
Unit: mm  
Notebook PC Applications  
0.4 ± 0.1  
1.27  
8
0.05 M A  
Portable Equipment Applications  
5
0.15 ± 0.05  
•
•
•
•
•
•
•
Small footprint due to a small and thin package  
High-speed switching  
4
0.595  
A
Small gate charge: Q  
= 23 nC (typ.)  
1
SW  
Low drain-source ON-resistance: R  
= 2.4 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 136 S (typ.)  
fs  
5.0 ± 0.2  
Low leakage current: I  
= 10 μA (max) (V  
= 40 V)  
DSS  
DS  
Enhancement mode: V = 1.3 to 2.3 V (V  
= 10 V, I = 1.0 mA)  
D
th  
DS  
0.05 S  
S
4
1
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
4.25 ± 0.2  
V
40  
40  
V
V
V
DSS  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
DGR  
GS  
8
5
V
±20  
46  
GSS  
DC  
(Note 1)  
I
D
1,2,3:SOURCE 4:GATE  
5,6,7,8:DRAIN  
Drain current  
A
Pulsed (Note 1)  
I
138  
45  
DP  
JEDEC  
JEITA  
⎯
⎯
Drain power dissipation (Tc = 25℃)  
P
W
W
D
D
Drain power dissipation  
(t = 10 s)  
(Note 2a)  
(t = 10 s)  
(Note 2b)  
P
2.8  
1.6  
TOSHIBA  
2-5Q1A  
Drain power dissipation  
P
W
Weight: 0.069 g (typ.)  
D
Single-pulse avalanche energy  
(Note 3)  
E
196  
46  
mJ  
A
AS  
Circuit Configuration  
Avalanche current  
I
AR  
Repetitive avalanche energy  
8
7
6
5
E
3.63  
mJ  
AR  
(Tc = 25℃) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
−55 to 150  
Storage temperature range  
stg  
Note: For Notes 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
1
2
3
4
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2009-04-22  
1234567

中文翻译

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