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TPCA8028-H(TE12L,Q PDF预览

TPCA8028-H(TE12L,Q

更新时间： 2024-11-21 21:11:47
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
7页 207K
描述
Power Field-Effect Transistor

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TPCA8028-H(TE12L,Q 技术参数

生命周期：End Of Life包装说明：,
Reach Compliance Code：unknown风险等级：5.71
Base Number Matches：1

TPCA8028-H(TE12L,Q 数据手册

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TPCA8028-H  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)  
TPCA8028-H  
High-Efficiency DC/DC Converter Applications  
Unit: mm  
Notebook PC Applications  
0.4±0.1  
1.27  
0.5±0.1  
0.05  
M A  
5
8
Portable Equipment Applications  
•
•
•
•
•
•
•
Small footprint due to a small and thin package  
High-speed switching  
0.15±0.05  
Small gate charge: Q  
= 20 nC (typ.)  
SW  
4
0.595  
A
1
Low drain-source ON-resistance: R  
= 2.0 mΩ (typ.)  
DS (ON)  
5.0±0.2  
0.95±0.05  
High forward transfer admittance: |Y | = 166 S (typ.)  
0.166±0.05  
fs  
Low leakage current: I  
= 10 μA (max) (V  
= 30 V)  
DSS  
DS  
0.05  
S
S
Enhancement mode: V = 1.3 to 2.3 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
1.1±0.2  
1
4
Absolute Maximum Ratings (Ta = 25°C)  
4.25±0.2  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
8
5
0.8±0.1  
V
30  
30  
V
V
V
DSS  
1,2,3:SOURCE 4:GATE  
5,6,7,8:DRAIN  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
DGR  
GS  
V
±20  
50  
GSS  
JEDEC  
―
―
DC  
(Note 1)  
I
D
Drain current  
A
JEITA  
Pulsed (Note 1)  
I
150  
45  
DP  
Drain power dissipation (Tc=25℃)  
P
W
W
TOSHIBA  
2-5Q1A  
D
D
Drain power dissipation  
(t = 10 s)  
Weight: 0.069 g (typ.)  
P
2.8  
1.6  
(Note 2a)  
(t = 10 s)  
(Note 2b)  
Drain power dissipation  
P
W
D
Circuit Configuration  
Single-pulse avalanche energy  
(Note 3)  
E
325  
50  
mJ  
A
AS  
8
7
6
5
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
4.03  
mJ  
AR  
(Tc=25℃) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
−55 to 150  
Storage temperature range  
stg  
1
2
3
4
Note: For Notes 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability  
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2008-01-22  
1234567

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