TPCA8030-H

更新时间： 2024-11-21 12:33:23

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
7页	148K
描述
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H)

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TPCA8030-H 技术参数

生命周期：	Lifetime Buy	包装说明：	SMALL OUTLINE, S-PDSO-F5
针数：	8	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.31
Is Samacsys：	N	雪崩能效等级（Eas）：	75 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V	最大漏极电流 (ID)：	24 A
最大漏源导通电阻：	0.0134 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	S-PDSO-F5	元件数量：	1
端子数量：	5	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	SQUARE
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	72 A	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

TPCA8030-H 数据手册

TPCA8030-H

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H)

TPCA8030-H

High-Efficiency DC-DC Converter Applications

Unit: mm

Notebook PC Applications

0.4 ± 0.1

1.27

0.05 M A

Portable Equipment Applications

0.15 ± 0.05

•

Small footprint due to a small and thin package

High-speed switching

0.595

Small gate charge: Q

= 5.0 nC (typ.)

Low drain-source ON-resistance: R

= 7.3 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 60 S (typ.)

5.0 ± 0.2

Low leakage current: I

= 10 μA (max) (V

= 30 V)

DSS

Enhancement mode: V = 1.5 to 2.5 V (V

= 10 V, I = 1 mA)

0.05 S

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain-source voltage

Symbol

Rating

Unit

4.25 ± 0.2

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

±20

GSS

1,2,3:SOURCE

5,6,7,8:DRAIN

4:GATE

(Note 1)

Drain current

Pulsed (Note 1)

JEDEC

⎯

Drain power dissipation

(Tc=25℃)

(t = 10 s)

(Note 2a)

(t = 10 s)

(Note 2b)

JEITA

2.8

1.6

TOSHIBA

2-5Q1A

Drain power dissipation

Weight: 0.069 g (typ.)

Single-pulse avalanche energy

(Note 3)

Circuit Configuration

Avalanche current

Repetitive avalanche energy

3.0

(Tc = 25℃) (Note 4)

150

°C

Channel temperature

−55 to 150

Storage temperature range

stg

Note: For Notes 1 to 4, refer to the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

2008-06-20

12 3 4 5 6 7

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