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TPCA8016-H(TE12L,Q PDF预览

TPCA8016-H(TE12L,Q

更新时间: 2024-11-25 15:54:55
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
7页 232K
描述
Power Field-Effect Transistor

TPCA8016-H(TE12L,Q 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.7
Base Number Matches:1

TPCA8016-H(TE12L,Q 数据手册

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TPCA8016-H  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII)  
TPCA8016-H  
High-Efficiency DCDC Converter Applications  
Unit: mm  
0.4±0.1  
1.27  
0.5±0.1  
0.05  
M A  
5
8
Small footprint due to small and thin package  
0.15±0.05  
High-speed switching  
Small gate charge: Qsw = 6.6 nC (typ.)  
4
0.595  
A
1
Low drain-source ON resistance: R  
= 16 m(typ.)  
DS (ON)  
5.0±0.2  
0.95±0.05  
High forward transfer admittance: |Y | = 40 S (typ.)  
0.166±0.05  
fs  
Low leakage current: I  
= 10 μA (max) (V  
= 60 V)  
DSS  
DS  
0.05  
S
S
Enhancement mode: V = 1.1 to 2.3 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
1.1±0.2  
1
4
Absolute Maximum Ratings (Ta = 25°C)  
4.25±0.2  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
8
5
0.8±0.1  
4GATE  
V
60  
60  
V
V
V
DSS  
1,2,3SOURCE  
5,6,7,8DRAIN  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
DGR  
GS  
JEDEC  
V
±20  
25  
GSS  
JEITA  
DC  
(Note 1)  
I
D
Drain current  
A
Pulsed (Note 1)  
I
75  
DP  
TOSHIBA  
2-5Q1A  
Drain power dissipation (Tc = 25)  
P
45  
W
W
D
D
Weight: 0.068 g (typ.)  
Drain power dissipation  
(t = 10 s)  
(Note 2a)  
(t = 10 s)  
(Note 2b)  
P
2.8  
1.6  
Drain power dissipation  
Circuit Configuration  
P
W
D
8
7
6
5
Single pulse avalanche energy  
(Note 3)  
E
45  
25  
mJ  
A
AS  
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
2.7  
mJ  
AR  
(Tc=25) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
1
2
3
4
55 to 150  
Storage temperature range  
stg  
Note: For Notes 1to 5, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2006-11-17  

TPCA8016-H(TE12L,Q 替代型号

型号 品牌 替代类型 描述 数据表
TPCA8006-H(TE12LQM TOSHIBA

类似代替

MOSFET N-CH 100V 18A SOP-8 ADV

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