TPCA8009-H

更新时间： 2024-11-21 03:26:47

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器
页数	文件大小	规格书
4页	105K
描述
High Speed and High Efficiency DC-DC Converters

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中文翻译

获取价格

数据手册

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TPCA8009-H 数据手册

TPCA8009-H

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type(π-MOSV)

TENTATIVE

TPCA8009-H

High Speed and High Efficiency DC-DC Converters

Unit: mm

0.4±0.1

1.27

0.5±0.1

0.05

M A

•

Small footprint due to small and thin package

High speed switching

Small gate charge: Q = 10nC (typ.)

0.15±0.05

Low drain-source ON resistance: R

240mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = S (typ.)

0.595

Low leakage current: I

Enhancement mode: V = 2 to 4V (V

= 100 µA (max) (V

th DS

= 100 V)

DSS

= 10 V, I = 1 mA)

5.0±0.2

0.95±0.05

0.166±0.05

0.05

Maximum Ratings (Ta = 25°C)

1.1±0.2

Characteristics

Symbol

Rating

Unit

150

±20

Drain-source voltage

4.25±0.2

DSS

Drain-gate voltage (R

= 20 kΩ)

DGR

0.8±0.1

Gate-source voltage

GSS

1,2,3：SOURCE

5,6,7,8：DRAIN

4：GATE

(Note 1)

Drain current

Pulsed (Note 1)

JEDEC

―

Drain power dissipation

(Tc=25℃)

(t = 10 s)

(Note 2a)

(t = 10 s)

(Note 2b)

JEITA

―

2.8

1.6

TOSHIBA

Weight: 0.08 g (typ.)

Drain power dissipation

Single pulse avalanche energy

(Note 3)

Circuit Configuration

Avalanche current

Repetitive avalanche energy

1.5

(Tc=25℃) (Note 4)

150

°C

Channel temperature

−55~150

Storage temperature range

stg

Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next

page.

This transistor is an electrostatic sensitive device. Please handle with

caution.

2004-4-11

12 3 4

中文翻译

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