Datasheet > TPCA8005-H_06

TPCA8005-H_06

更新时间： 2024-11-25 08:40:07

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器
页数	文件大小	规格书
7页	440K
描述
High Efficiency DC／DC Converter Applications

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TPCA8005-H_06 数据手册

TPCA8005-H

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)

TPCA8005-H

High Efficiency DC／DC Converter Applications

Unit: mm

Notebook PC Applications

0.4±0.1

1.27

0.5±0.1

0.05

M A

Portable Equipment Applications

0.15±0.05

•

Small footprint due to a small and thin package

High speed switching

0.595

Small gate charge: Q

=7.7 nC (typ.)

5.0±0.2

Low drain-source ON-resistance: R

DS (ON)

= 6.8 mΩ (typ.)

0.95±0.05

0.166±0.05

High forward transfer admittance: |Y | =46 S (typ.)

0.05

Low leakage current: I

= 10 µA (max) (V

= 30 V)

= 10 V, I = 1 mA)

DSS

1.1±0.2

Enhancement mode: V = 1.1 to 2.3 V (V

th DS

4.25±0.2

Absolute Maximum Ratings (Ta = 25°C)

0.8±0.1

1,2,3：SOURCE

5,6,7,8：DRAIN

4：GATE

Characteristic

Drain-source voltage

Symbol

Rating

Unit

DSS

JEDEC

―

DGR

Drain-gate voltage (R

= 20 kΩ)

JEITA

±20

Gate-source voltage

GSS

TOSHIBA

2-5Q1A

(Note 1)

Drain current

Weight: 0.069 g (typ.)

Pulsed (Note 1)

Drain power dissipation (Tc=25℃)

Drain power dissipation

(t = 10 s)

Circuit Configuration

2.8

1.6

(Note 2a)

(t = 10 s)

(Note 2b)

Drain power dissipation

Single-pulse avalanche energy

(Note 3)

Avalanche current

Repetitive avalanche energy

2.7

(Tc=25℃) (Note 4)

150

°C

Channel temperature

−55 to 150

Storage temperature range

stg

Note: For Notes 1 to 4, refer to the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

2006-11-16

12 3 4 5 6 7

中文翻译

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