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TPC8406-H PDF预览

TPC8406-H

更新时间： 2024-10-02 06:01:51
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
11页 289K
描述
Field Effect Transistor Silicon P/N-Channel MOS Type (P-Channel／N-Channel Ultra-High-Speed U-MOSIII)

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TPC8406-H 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G8
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.73
Is Samacsys：N配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：40 V最大漏极电流 (Abs) (ID)：6.5 A
最大漏极电流 (ID)：6.5 A最大漏源导通电阻：0.037 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
JESD-609代码：e0元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL AND P-CHANNEL最大功率耗散 (Abs)：1.5 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：TIN LEAD
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

TPC8406-H 数据手册

 浏览型号TPC8406-H的Datasheet PDF文件第2页浏览型号TPC8406-H的Datasheet PDF文件第3页浏览型号TPC8406-H的Datasheet PDF文件第4页浏览型号TPC8406-H的Datasheet PDF文件第5页浏览型号TPC8406-H的Datasheet PDF文件第6页浏览型号TPC8406-H的Datasheet PDF文件第7页 
TPC8406-H  
TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type  
(P-Channel／N-Channel Ultra-High-Speed U-MOSIII)  
TPC8406-H  
High Efficiency DC／DC Converter Applications  
Notebook PC Applications  
Portable Equipment Applications  
CCFL Inverter Applications  
Unit: mm  
•
•
•
Small footprint due to a small and thin package  
High speed switching  
Low drain-source ON-resistance: P-Channel R  
N-Channel R  
= 24 mΩ (typ.)  
= 22 mΩ (typ.)  
DS (ON)  
DS (ON)  
•
•
Small gate charge:  
P-Channel Q  
N-Channel Q  
= 9.7 nC (typ.)  
SW  
= 3.5 nC (typ.)  
SW  
fs  
High forward transfer admittance: P-Channel |Y | = 13 S (typ.)  
N-Channel |Y | = 14 S (typ.)  
fs  
•
•
Low leakage current: P-Channel I  
= −10 μA (V  
= −40 V)  
= 40 V)  
DSS  
DS  
N-Channel I  
= 10 μA (V  
DSS  
DS  
Enhancement mode  
: P-Channel V = −0.8 to −2.0 V (V  
= −10 V, I = −1 mA)  
th  
DS  
D
: N-Channel V = 1.1 to 2.3 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
JEDEC  
JEITA  
―
―
Rating  
Characteristic  
Symbol  
Unit  
P-Channel N-Channel  
Drain-source voltage  
V
−40  
−40  
±20  
−6.5  
−26  
40  
40  
V
V
V
DSS  
TOSHIBA  
2-6J1E  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
Weight: 0.085 g (typ.)  
V
±20  
6.5  
26  
GSS  
DC  
Drain current  
Pulse  
(Note 1)  
(Note 1)  
I
D
A
I
DP  
Circuit Configuration  
Single-device operation  
(Note 3a)  
Drain power  
dissipation  
(t = 10s)  
P
P
P
P
1.5  
1.1  
1.5  
1.1  
D(1)  
8
7
6
5
Single-device value at  
dual operation (Note 3b)  
D(2)  
D(1)  
D(2)  
(Note 2a)  
W
Drain power Single-device operation  
dissipation  
0.75  
0.75  
(Note 3a)  
(t = 10s)  
Single-device value at  
dual operation (Note 3b)  
0.45  
19  
0.45  
19  
(Note 2b)  
1
2
3
4
Single-pulse avalanche energy  
Avalanche current  
E
mJ  
A
AS  
(Note 4a) (Note 4b)  
N-ch  
P-ch  
I
−6.5 6.5  
AR  
Repetitive avalanche energy  
Single-device value at operation  
E
0.08  
150  
mJ  
AR  
(Note 2a, 3b, 5)  
Channel temperature  
T
°C  
°C  
ch  
Storage temperature range  
T
stg  
−55 to 150  
Note: For Notes 1 to 5, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2009-09-29  
1234567...11

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