Datasheet > TPC8229-H(TE12L)

TPC8229-H(TE12L)

更新时间： 2024-11-21 19:55:27

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	255K
描述
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,80V V(BR)DSS,3.2A I(D),SO

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TPC8229-H(TE12L) 技术参数

TPC8229-H

MOSFETs Silicon N-Channel MOS (U-MOS-H)

TPC8229-H

1. Applications

•

DC-DC Converters

•

CCFL Inverters

2. Features

(1) High-speed switching

(2) Small gate charge: QSW = 2.4 nC (typ.)

(3) Low drain-source on-resistance: RDS(ON) = 53 mΩ (typ.)

(4) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)

(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)

3. Packaging and Internal Circuit

1, 3: Source

2, 4: Gate

5, 6, 7, 8: Drain

SOP-8

2012-12-28

Rev.2.0

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
TPC8229-H(TE12L,Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,80V V(BR)DSS,3.2A I(D),SO
TPC82A12	ETC	获取价格	SINGLE UNIDIRECTIONAL BREAKOVER DIODE\|109V V(BO) MAX\|300MA I(S)\|TO-220
TPC82A18	STMICROELECTRONICS	获取价格	SINGLE UNIDIRECTIONAL BREAKOVER DIODE,109V V(BO) MAX,300MA I(S),TO-220
TPC82B12	STMICROELECTRONICS	获取价格	SINGLE UNIDIRECTIONAL BREAKOVER DIODE,99V V(BO) MAX,300MA I(S),TO-220
TPC82B18	STMICROELECTRONICS	获取价格	SINGLE UNIDIRECTIONAL BREAKOVER DIODE,99V V(BO) MAX,300MA I(S),TO-220
TPC8301	TOSHIBA	获取价格	Silicon P Channel MOS Type (L2−MOSVI)
TPC8301(TE12L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,30V V(BR)DSS,3.5A I(D),SO
TPC8302	TOSHIBA	获取价格	Silicon P Channel MOS Type (L2−MOSVI)
TPC8303	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII)
TPC8303(TE12L)	TOSHIBA	获取价格	Trans MOSFET P-CH 30V 4.5A 8-Pin SOP T/R