Datasheet > TPC8303

TPC8303

更新时间： 2024-10-01 22:28:19

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	521K
描述
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII)

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中文翻译

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TPC8303 数据手册

TPC8303

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII)

TPC8303

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PCs

Unit: mm

ꢀ Low drain−source ON resistance : R

DS (ON)

= 27 mΩ (typ.)

ꢀ High forward transfer admittance : |Y | = 7 S (typ.)

ꢀ Low leakage current : I

ꢀ Enhancement−mode : V = −0.8~ −2.0 V (V

= −10 µA (max) (V

= −30 V)

= −10 V, I = −1 mA)

DSS

Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−30

±20

−4.5

−18

DSS

Drain-gate voltage (R

= 20 kΩ)

DGR

Gate-source voltage

GSS

(Note 1)

Drain current

JEDEC

JEITA

―

Pulse

Single-device

operation

1.5

1.0

D (1)

Drain power

dissipation

(t = 10s)

TOSHIBA

2-6J1E

(Note 3a)

Single-device value

at dual operation

(Note 3b)

Weight: 0.08 g (typ.)

(Note 2a)

D(2)

Single-device

operation

0.75

0.45

Circuit Configuration

D (1)

D (2)

Drain power

dissipation

(t = 10s)

(Note 3a)

Single-device value

at dual operation

(Note 3b)

(Note 2b)

Single pulse avalanche energy

(Note 4)

Avalanche current

−4.5

Repetitive avalanche energy

Single-device value at operation

(Note 2a, Note 3b, Note 5)

0.10

Channel temperature

150

°C

Storage temperature range

−55~150

stg

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5), please refer to the next page.

This transistor is an electrostatic sensitive device. Please handle with caution.

2002-04-18

12 3 4 5 6 7

中文翻译

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