品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | / | |
页数 | 文件大小 | 规格书 |
1页 | 111K | |
描述 | ||
SINGLE UNIDIRECTIONAL BREAKOVER DIODE,99V V(BO) MAX,300MA I(S),TO-220 |
是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | not_compliant | 风险等级: | 5.92 |
最大转折电压: | 99 V | 最大维持电流: | 120 mA |
JESD-609代码: | e0 | 最高工作温度: | 70 °C |
最低工作温度: | 重复峰值反向电压: | 74 V | |
子类别: | Breakover Diodes | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TPC82B18 | STMICROELECTRONICS |
获取价格 |
SINGLE UNIDIRECTIONAL BREAKOVER DIODE,99V V(BO) MAX,300MA I(S),TO-220 | |
TPC8301 | TOSHIBA |
获取价格 |
Silicon P Channel MOS Type (L2−MOSVI) | |
TPC8301(TE12L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,30V V(BR)DSS,3.5A I(D),SO | |
TPC8302 | TOSHIBA |
获取价格 |
Silicon P Channel MOS Type (L2−MOSVI) | |
TPC8303 | TOSHIBA |
获取价格 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII) | |
TPC8303(TE12L) | TOSHIBA |
获取价格 |
Trans MOSFET P-CH 30V 4.5A 8-Pin SOP T/R | |
TPC8305 | TOSHIBA |
获取价格 |
Silicon P Channel MOS Type (U−MOSII) | |
TPC8305_06 | TOSHIBA |
获取价格 |
Lithium Ion Battery ApplicationsPortable Equipment ApplicationsNotebook PC Applications | |
TPC8401 | TOSHIBA |
获取价格 |
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U−MOSII) | |
TPC8402 | TOSHIBA |
获取价格 |
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U−MOSII) |