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TIM1213-4L PDF预览

TIM1213-4L

更新时间： 2024-11-20 21:54:27
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
4页 134K
描述
Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band)

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中文翻译

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TIM1213-4L 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：2-9D1A, 3 PIN针数：2
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：20 weeks风险等级：5.36
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：15 V最大漏极电流 (Abs) (ID)：5.2 A
最大漏极电流 (ID)：5.2 AFET 技术：JUNCTION
最高频带：KU BANDJESD-30 代码：R-CDFM-F2
元件数量：1端子数量：2
工作模式：DEPLETION MODE最高工作温度：175 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL功耗环境最大值：30 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管元件材料：GALLIUM ARSENIDE

TIM1213-4L 数据手册

 浏览型号TIM1213-4L的Datasheet PDF文件第2页浏览型号TIM1213-4L的Datasheet PDF文件第3页浏览型号TIM1213-4L的Datasheet PDF文件第4页 
TOSHIBA  
MICROWAVE POWER GaAs FET  
TIM1213-4L  
Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band)  
Features  
• Low intermodulation distortion  
- IM = -45 dBc at Po = 25 dBm,  
3
- Single carrier level  
• High power  
- P  
= 36.5 dBm at 12.7 GHz to 13.2 GHz  
1dB  
• High gain  
- G = 7.5 dB at 12.7 GHz to 13.2 GHz  
1dB  
• Broad band internally matched  
• Hermetically sealed package  
RF Performance Specifications (Ta = 25° C)  
Characteristics  
Output Power at 1dB  
Symbol  
Condition  
Unit  
Min.  
Typ.  
Max  
P
dBm  
35.5  
36.5  
–
–
1dB  
Compression Point  
Power Gain at 1dB  
Compression Point  
G
dB  
6.5  
7.5  
1dB  
V
= 9V  
DS  
f = 12.7 ~ 13.2 GHz  
Drain Current  
I
A
dB  
%
–
–
1.7  
–
2.2  
±0.8  
–
DS1  
Gain Flatness  
∆G  
Power Added Efficiency  
3rd Order Intermodulation Distortion  
Drain Current  
η
–
24  
-45  
1.7  
–
add  
IM  
dBc  
A
-42  
–
–
3
Note 1  
xI xR  
I
2.2  
70  
DS2  
Channel-Temperature Rise  
∆T  
V
°C  
–
ch  
DS DS  
th(c-c)  
Note 1: 2 Tone Test (Pout = 25 dBm Single Carrier Level).  
Electrical Characteristics (Ta = 25° C)  
Characteristic  
Trans-conductance  
Symbol  
Condition  
= 3V  
Unit  
Min.  
Typ.  
Max  
V
I
DS  
gm  
mS  
V
–
1200  
-3.5  
–
= 2.0A  
DS  
V
= 3V  
DS  
Pinch-off Voltage  
V
-2  
-5  
GSoff  
DSS  
I
= 60mA  
DS  
V
V
= 3V  
= 0V  
DS  
GS  
Saturated Drain Current  
Gate-Source Breakdown Voltage  
Thermal Resistance  
I
A
V
–
-5  
–
4.0  
–
5.2  
–
V
I
= -60µA  
GSO  
GS  
Channel  
to case  
R
°C/W  
2.9  
3.5  
th (c-c)  
The information contained here is subject to change without notice.  
The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties  
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic  
equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equip-  
ments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types  
of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.  
TOSHIBA CORPORATION  
MW50230196  
1/4  
1234

中文翻译

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TIM1213-4L 替代型号

型号 品牌 替代类型 描述 数据表
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