Datasheet > 晶体管 > 射频场效应晶体管> TIM1414-2-252

TIM1414-2-252

更新时间： 2024-11-21 05:54:59

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体射频场效应晶体管局域网高功率电源
页数	文件大小	规格书
4页	196K
描述
HIGH POWER P1dB=33.0 dBm at 13.75 GHz to 14.5 GHz

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技术参数
数据手册

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TIM1414-2-252 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-CDFM-F2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.53
Is Samacsys：	N	Base Number Matches：	1

TIM1414-2-252 数据手册

MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR

TIM1414-2-252

TECHNICAL DATA

FEATURES

HIGH POWER

BROAD BAND INTERNALLY MATCHED FET

P1dB=33.0 dBm at 13.75 GHz to 14.5 GHz HERMETICALLY SEALED PACKAGE

HIGH GAIN

G1dB=6.0 dB at 13.75 GHz to 14.5 GHz

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )

CHARACTERISTICS

Output Power at 1dB Gain

Compression Point

SYMBOL

CONDITIONS

UNIT MIN. TYP. MAX.

P1dB

dBm 32.0 33.0

⎯

Power Gain at 1dB Gain

Compression Point

G1dB

VDS= 9V

f= 13.75 to 14.5GHz

5.0

6.0

⎯

Drain Current

IDS1

η_add

ΔTch

0.85

1.1

⎯

Power Added Efficiency

Channel Temperature Rise

(VDS X IDS + Pin – P1dB)

X Rth(c-c)

⎯

Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.)

ELECTRICAL CHARACTERISTICS ( Ta= 25 C )

CHARACTERISTICS

SYMBOL

CONDITIONS

VDS= 3V

UNIT MIN. TYP. MAX.

Transconductance

600

-3.5

2.0

⎯

-2.0

⎯

-5.0

⎯

IDS= 1.0 A

VDS= 3V

IDS= 30mA

VDS= 3V

Pinch-off Voltage

VGSoff

IDSS

Saturated Drain Current

VGS= 0V

Gate-Source Breakdown

Voltage

VGSO

Rth(c-c)

IGS= -30μA

-5

⎯

C/W

Thermal Resistance

Channel to Case

5.0

6.0

⎯

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Rev. Jul. 2006

12 3 4

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