Datasheet > TIM1414-30L

TIM1414-30L

更新时间： 2024-11-21 03:27:39

品牌	Logo	应用领域
东芝 - TOSHIBA		微波
页数	文件大小	规格书
2页	49K
描述
MICROWAVE POWER GaAs FET

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中文翻译

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技术参数
数据手册

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TIM1414-30L 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-CDFM-F2
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.56
Base Number Matches：	1

TIM1414-30L 数据手册

MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR

TIM1414-30L

TECHNICAL DATA

FEATURES

n HIGH POWER

P1dB=45.0dBm at 14.0GHz to 14.5GHz

n HIGH GAIN

n BROAD BAND INTERNALLY MATCHED FET

n HERMETICALLY SEALED PACKAGE

G1dB=5.5dB at 14.0GHz to 14.5GHz

n LOW INTERMODULATION DISTORTION

IM3(Min.)=- 25dBc at Po=38.0dBm Single Carrier Level

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )

CHARACTERISTICS

Output Power at 1dB Gain

Compression Point

SYMBOL

CONDITIONS

UNIT MIN. TYP. MAX.

P1dB

dBm 44.0 45.0

VDS= 10V

IDSset@7.0A

Power Gain at 1dB Gain

Compression Point

G1dB

4.5

5.5

f = 14.0 to 14.5GHz

Drain Current

IDS1

h_add

IM3

10.0 11.0

Power Added Efficiency

3rd Order Intermodulation

Distortion

Two-Tone Test

Po= 38.0dBm

dBc

-25

(Single Carrier Level)

(VDS X IDS +Pin-P1dB)

X Rth(c-c)

Drain Current

IDS2

9.0

10.1

100

Channel Temperature Rise

DTch

Recommended gate resistance(Rg) : Rg= 28 W(MAX.)

ELECTRICAL CHARACTERISTICS ( Ta= 25 C )

CHARACTERISTICS

SYMBOL

CONDITIONS

VDS= 3V

IDS= 9.6A

VGSoff VDS= 3V

IDS= 290mA

UNIT MIN. TYP. MAX.

Transconductance

5.5

-2.0

20.0

-0.7

-4.5

Pinch-off Voltage

Saturated Drain Current

V = 3V

DSS

V = 0V

Gate-Source Breakdown

Voltage

VGSO IGS= -290 A

-5

C/W

Thermal Resistance

Rth(c-c) Channel to Case

1.1

u The information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefore advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Rev. Jan. 2007

中文翻译

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