Datasheet > TIM1213-5

TIM1213-5

更新时间： 2024-11-20 21:54:27

品牌	Logo	应用领域
东芝 - TOSHIBA		微波
页数	文件大小	规格书
2页	88K
描述
MICROWAVE POWER GaAs FET

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中文翻译

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数据手册

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TIM1213-5 数据手册

MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR

TIM1213-5

TECHNICAL DATA

PRELIMINARY

FEATURES

HIGH POWERT

BROAD BAND INTERNALLY MATCHED

HERMETICALLY SEALED PACKAGE

P1dB=37.0dBm at 12.7GHz to 13.2GHz

HIGH GAIN

G1dB=7.0dB at 12.7GHz to 13.2GHz

RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C )

CHARACTERISTICS

Output Power at 1dB

Compression Point

Power Gain at 1dB

SYMBOL

CONDITION

UNIT MIN. TYP. MAX.

P1dB

dBm

37.0 37.5

VDS= 9V

G1dB

6.0

7.0

f= 12.7 to 13.2GHz

Compression Point

Drain Current

IDS1

2.0

2.5

h_add

Tch

Power Added Efficiency

Channel Temperature Rise

VDS X IDS X Rth(c-c)

ELECTRICAL CHARACTERISTICS ( Ta= 25° C )

CHARACTERISTICS

SYMBOL

CONDITION

VDS= 3V

IDS= 2.4A

VDS= 3V

IDS= 72mA

VDS= 3V

VGS= 0V

UNIT MIN. TYP. MAX.

-2.0

Transconductance

1400

-3.5

5.0

Pinch-off Voltage

VGSoff

IDSS

-5.0

5.7

Saturated Drain Current

Gate-Source Breakdown

Voltage

VGSO

IGS= -72 A

-5

Thermal Resistance

Rth(c-c) Channel to Case

C/W

3.0

3.7

u The information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Jun. 2002

中文翻译

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