Datasheet > TIM1314-30L_09

TIM1314-30L_09

更新时间： 2024-11-21 05:54:59

品牌	Logo	应用领域
东芝 - TOSHIBA		高功率电源
页数	文件大小	规格书
2页	110K
描述
HIGH POWER P1dB=45.0dBm at 13.75GHz to 14.5GHz

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TIM1314-30L_09 数据手册

MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR

TIM1314-30L

TECHNICAL DATA

FEATURES

HIGH POWER

P1dB=45.0dBm at 13.75GHz to 14.5GHz

HIGH GAIN

BROAD BAND INTERNALLY MATCHED FET

HERMETICALLY SEALED PACKAGE

G1dB=5.0dB at 13.75GHz to 14.5GHz

LOW INTERMODULATION DISTORTION

IM3(Min.)=−25dBc at Po=38.0dBm Single Carrier Level

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )

CHARACTERISTICS

Output Power at 1dB Gain

Compression Point

Power Gain at 1dB Gain

Compression Point

Drain Current

SYMBOL

CONDITIONS

UNIT MIN. TYP. MAX.

P1dB

dBm 44.0 45.0

⎯

VDS= 10V

IDSset≅7.0A

G1dB

4.0

5.0

⎯

f = 13.75 to 14.5GHz

IDS1

η_add

IM3

10.0 11.0

⎯

Power Added Efficiency

3rd Order Intermodulation

Distortion

⎯

Two-Tone Test

Po= 38.0dBm

dBc

-25

⎯

(Single Carrier Level)

(VDS X IDS +Pin-P1dB)

X Rth(c-c)

Drain Current

IDS2

9.0

10.1

100

⎯

Channel Temperature Rise

ΔTch

⎯

Recommended gate resistance(Rg) : Rg= 10 Ω(MAX.)

ELECTRICAL CHARACTERISTICS ( Ta= 25 C )

CHARACTERISTICS

SYMBOL

CONDITIONS

VDS= 3V

IDS= 9.6A

VGSoff VDS= 3V

IDS= 290mA

VDS= 3V

UNIT MIN. TYP. MAX.

Transconductance

5.5

-2.0

20.0

⎯

-0.7

⎯

-4.5

⎯

Pinch-off Voltage

Saturated Drain Current

IDSS

VGS= 0V

IGS= -290 A

Gate-Source Breakdown

Voltage

VGSO

-5

⎯

C/W

Thermal Resistance

Rth(c-c) Channel to Case

1.0

1.1

⎯

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefore advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Rev. April 2009

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