TIM1414-10LA-252

更新时间： 2024-11-25 07:04:31

品牌	Logo	应用领域
东芝 - TOSHIBA		高功率电源
页数	文件大小	规格书
4页	185K
描述
HIGH POWER P1dB=39.5dBm at 13.75GHz to 14.5GHz

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TIM1414-10LA-252 数据手册

MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR

TIM1414-10LA-252

TECHNICAL DATA

FEATURES

HIGH POWER

P1dB=39.5dBm at 13.75GHz to 14.5GHz

HIGH GAIN

BROAD BAND INTERNALLY MATCHED FET

HERMETICALLY SEALED PACKAGE

G1dB=5.5dB at 13.75GHz to 14.5GHz

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )

CHARACTERISTICS

Output Power at 1dB Gain

Compression Point

Power Gain at 1dB Gain

Compression Point

Drain Current

SYMBOL

CONDITIONS

UNIT MIN. TYP. MAX.

P1dB

dBm 39.0 39.5

⎯

G1dB

4.5

5.5

⎯

VDS= 9V

f= 13.75 to 14.5GHz

IDS1

ΔG

η_add

IM3

4.0

⎯

5.0

±0.8

⎯

Gain Flatness

Power Added Efficiency

3^rdOrder Intermodulation

Distortion

dBc

-42

-45

⎯

Two-Tone Test

Po=29.0 dBm

Drain Current

IDS2

4.0

5.0

⎯

(Single Carrier Level)

VDS X IDS X Rth(c-c)

Channel Temperature Rise

ΔTch

⎯

Recommended gate resistance(Rg) : Rg= 100 Ω(MAX.)

ELECTRICAL CHARACTERISTICS ( Ta= 25 C )

CHARACTERISTICS

SYMBOL

CONDITIONS

VDS= 3V

UNIT MIN. TYP. MAX.

Transconductance

2800

⎯

-2.0

⎯

-5.0

⎯

IDS= 4.8A

VDS= 3V

IDS= 145mA

VDS= 3V

VGS=0V

Pinch-off Voltage

VGSoff

IDSS

-3.5

Saturated Drain Current

10.0

Gate-Source Breakdown

Voltage

VGSO

-5

⎯

IGS= -145 A

C/W

Thermal Resistance

Rth(c-c)

Channel to Case

2.0

2.5

⎯

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Rev. Sep. 2003

12 3 4

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