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TIM1414-10LA PDF预览

TIM1414-10LA

更新时间: 2024-11-21 03:27:39
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体射频场效应晶体管微波局域网
页数 文件大小 规格书
4页 184K
描述
MICROWAVE POWER GaAs FET

TIM1414-10LA 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.58
Is Samacsys:NBase Number Matches:1

TIM1414-10LA 数据手册

 浏览型号TIM1414-10LA的Datasheet PDF文件第2页浏览型号TIM1414-10LA的Datasheet PDF文件第3页浏览型号TIM1414-10LA的Datasheet PDF文件第4页 
MICROWAVE POWER GaAs FET  
MICROWAVE SEMICONDUCTOR  
TIM1414-10LA  
TECHNICAL DATA  
FEATURES  
„ LOW INTERMODULATION DISTORTION „ HIGH GAIN  
IM3=-45 dBc at Pout= 29.0dBm  
„ HIGH POWER  
G1dB=6.0 dB at 14.0 GHz to 14.5GHz  
„ BROAD BAND INTERNALLY MATCHED FET  
„ HERMETICALLY SEALED PACKAGE  
P1dB=40.5dBm at 14.0GHz to 14.5GHz  
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )  
°
CHARACTERISTICS  
Output Power at 1dB Gain  
Compression Point  
Power Gain at 1dB Gain  
Compression Point  
Drain Current  
SYMBOL  
CONDITIONS  
UNIT MIN. TYP. MAX.  
P1dB  
dBm 40.0 40.5  
G1dB  
dB  
5.0  
6.0  
VDS= 9V  
f= 14.0 to 14.5GHz  
IDS1  
ΔG  
ηadd  
IM3  
A
dB  
%
4.0  
23  
5.0  
±0.8  
Gain Flatness  
Power Added Efficiency  
3rd Order Intermodulation  
Distortion  
dBc  
-42  
-45  
Two-Tone Test  
Po=29.0 dBm  
Drain Current  
IDS2  
A
4.0  
5.0  
90  
(Single Carrier Level)  
(VDS X IDS + Pin – P1dB)  
X Rth(c-c)  
C
°
Channel Temperature Rise  
ΔTch  
Recommended gate resistance(Rg) : Rg= 100 Ω(MAX.)  
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )  
°
CHARACTERISTICS  
SYMBOL  
CONDITIONS  
VDS= 3V  
UNIT MIN. TYP. MAX.  
Transconductance  
gm  
mS  
2800  
-3.5  
10.0  
-2.0  
-5.0  
IDS= 4.8A  
VDS= 3V  
IDS= 145mA  
VDS= 3V  
Pinch-off Voltage  
VGSoff  
IDSS  
V
Saturated Drain Current  
A
VGS= 0V  
Gate-Source Breakdown  
Voltage  
VGSO  
Rth(c-c)  
IGS= -145μA  
V
-5  
C/W  
°
Thermal Resistance  
Channel to Case  
2.0  
2.5  
‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is  
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,  
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.  
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA  
before proceeding with design of equipment incorporating this product.  
Rev. May 2007  

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