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TIM1213-8L

更新时间： 2024-11-25 21:11:51
品牌 Logo 应用领域
东芝 - TOSHIBA 局域网晶体管
页数 文件大小 规格书
4页 130K
描述
TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power

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中文翻译

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TIM1213-8L 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：FLANGE MOUNT, R-CDFM-F2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.63外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：15 V
最大漏极电流 (Abs) (ID)：10.4 A最大漏极电流 (ID)：10.4 A
FET 技术：METAL-OXIDE SEMICONDUCTOR最高频带：KU BAND
JESD-30 代码：R-CDFM-F2元件数量：1
端子数量：2工作模式：DEPLETION MODE
最高工作温度：175 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：240极性/信道类型：N-CHANNEL
功耗环境最大值：60 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管元件材料：GALLIUM ARSENIDE
Base Number Matches：1

TIM1213-8L 数据手册

 浏览型号TIM1213-8L的Datasheet PDF文件第2页浏览型号TIM1213-8L的Datasheet PDF文件第3页浏览型号TIM1213-8L的Datasheet PDF文件第4页 
TOSHIBA  
MICROWAVE POWER GaAs FET  
TIM1213-8L  
Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band)  
Features  
• Low intermodulation distortion  
- IM = -45 dBc at Po = 28 dBm,  
3
- Single carrier level  
• High power  
- P  
= 39.5 dBm at 12.7 GHz to 13.2 GHz  
1dB  
• High gain  
- G = 5.0 dB at 12.7 GHz to 13.2 GHz  
1dB  
• Broad band internally matched  
• Hermetically sealed package  
RF Performance Specifications (Ta = 25° C)  
Characteristics  
Output Power at 1dB  
Symbol  
Condition  
Unit  
Min.  
Typ.  
Max  
P
dBm  
38.5  
39.5  
–
–
1dB  
Compression Point  
Power Gain at 1dB  
Compression Point  
G
dB  
4.0  
5.0  
1dB  
V
= 9V  
DS  
f = 12.7 ~ 13.2 GHz  
Drain Current  
I
A
dB  
%
–
–
3.4  
–
4.4  
±0.8  
–
DS1  
Gain Flatness  
∆G  
Power Added Efficiency  
3rd Order Intermodulation Distortion  
Drain Current  
η
–
20  
-45  
3.4  
–
add  
IM  
dBc  
A
-42  
–
–
3
Note 1  
xI xR  
I
4.4  
80  
DS2  
Channel-Temperature Rise  
∆T  
V
°C  
–
ch  
DS DS  
th(c-c)  
Note 1: 2 Tone Test (Pout = 28 dBm Single Carrier Level).  
Electrical Characteristics (Ta = 25° C)  
Characteristic  
Trans-conductance  
Symbol  
Condition  
= 3V  
Unit  
Min.  
Typ.  
Max  
V
I
DS  
gm  
mS  
V
–
2400  
-3.5  
–
= 4.0A  
DS  
V
= 3V  
DS  
Pinch-off Voltage  
V
I
-2  
-5  
GSoff  
DSS  
I
= 120mA  
DS  
V
V
= 3V  
= 0V  
DS  
GS  
Saturated Drain Current  
Gate-Source Breakdown Voltage  
Thermal Resistance  
A
V
–
-5  
–
8.0  
–
10.4  
–
V
I
= -120µA  
GS  
GSO  
Channel  
to case  
R
°C/W  
1.6  
2.5  
th (c-c)  
The information contained here is subject to change without notice.  
The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties  
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic  
equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equip-  
ments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types  
of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.  
TOSHIBA CORPORATION  
MW50250196  
1/4  
1234

中文翻译

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