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TIM1213-4 PDF预览

TIM1213-4

更新时间： 2024-11-21 13:14:39
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
4页 134K
描述
TRANSISTOR RF POWER, FET, 2-9D1B, 3 PIN, FET RF Power

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中文翻译

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TIM1213-4 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Obsolete包装说明：FLANGE MOUNT, R-CDFM-F2
针数：3Reach Compliance Code：unknown
风险等级：5.63Is Samacsys：N
Base Number Matches：1

TIM1213-4 数据手册

 浏览型号TIM1213-4的Datasheet PDF文件第2页浏览型号TIM1213-4的Datasheet PDF文件第3页浏览型号TIM1213-4的Datasheet PDF文件第4页 
TOSHIBA  
MICROWAVE POWER GaAs FET  
TIM1213-4L  
Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band)  
Features  
• Low intermodulation distortion  
- IM = -45 dBc at Po = 25 dBm,  
3
- Single carrier level  
• High power  
- P  
= 36.5 dBm at 12.7 GHz to 13.2 GHz  
1dB  
• High gain  
- G = 7.5 dB at 12.7 GHz to 13.2 GHz  
1dB  
• Broad band internally matched  
• Hermetically sealed package  
RF Performance Specifications (Ta = 25° C)  
Characteristics  
Output Power at 1dB  
Symbol  
Condition  
Unit  
Min.  
Typ.  
Max  
P
dBm  
35.5  
36.5  
–
–
1dB  
Compression Point  
Power Gain at 1dB  
Compression Point  
G
dB  
6.5  
7.5  
1dB  
V
= 9V  
DS  
f = 12.7 ~ 13.2 GHz  
Drain Current  
I
A
dB  
%
–
–
1.7  
–
2.2  
±0.8  
–
DS1  
Gain Flatness  
∆G  
Power Added Efficiency  
3rd Order Intermodulation Distortion  
Drain Current  
η
–
24  
-45  
1.7  
–
add  
IM  
dBc  
A
-42  
–
–
3
Note 1  
xI xR  
I
2.2  
70  
DS2  
Channel-Temperature Rise  
∆T  
V
°C  
–
ch  
DS DS  
th(c-c)  
Note 1: 2 Tone Test (Pout = 25 dBm Single Carrier Level).  
Electrical Characteristics (Ta = 25° C)  
Characteristic  
Trans-conductance  
Symbol  
Condition  
= 3V  
Unit  
Min.  
Typ.  
Max  
V
I
DS  
gm  
mS  
V
–
1200  
-3.5  
–
= 2.0A  
DS  
V
= 3V  
DS  
Pinch-off Voltage  
V
-2  
-5  
GSoff  
DSS  
I
= 60mA  
DS  
V
V
= 3V  
= 0V  
DS  
GS  
Saturated Drain Current  
Gate-Source Breakdown Voltage  
Thermal Resistance  
I
A
V
–
-5  
–
4.0  
–
5.2  
–
V
I
= -60µA  
GSO  
GS  
Channel  
to case  
R
°C/W  
2.9  
3.5  
th (c-c)  
The information contained here is subject to change without notice.  
The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties  
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic  
equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equip-  
ments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types  
of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.  
TOSHIBA CORPORATION  
MW50230196  
1/4  
1234

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TIM1213-4L TOSHIBA

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 		Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band)
TIM1213-4UL TOSHIBA

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 		TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FE
TIM1213-8ULA TOSHIBA

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 		TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FE
TIM1314-15UL TOSHIBA

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 		TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FE
TIM1314-30L TOSHIBA

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 		MICROWAVE POWER GaAs FET
TIM1314-30L_09 TOSHIBA

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 		HIGH POWER P1dB=45.0dBm at 13.75GHz to 14.5GHz
TIM1314-4UL TOSHIBA

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 		RF POWER, FET

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