5秒后页面跳转
SUP45N05-20L-E3 PDF预览

SUP45N05-20L-E3

更新时间: 2024-09-23 15:53:11
品牌 Logo 应用领域
威世 - VISHAY 局域网开关脉冲晶体管
页数 文件大小 规格书
5页 52K
描述
Trans MOSFET N-CH 50V 45A 3-Pin(3+Tab) TO-220AB

SUP45N05-20L-E3 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.25外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:50 V
最大漏极电流 (Abs) (ID):45 A最大漏极电流 (ID):45 A
最大漏源导通电阻:0.02 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):3.75 W
最大脉冲漏极电流 (IDM):100 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SUP45N05-20L-E3 数据手册

 浏览型号SUP45N05-20L-E3的Datasheet PDF文件第2页浏览型号SUP45N05-20L-E3的Datasheet PDF文件第3页浏览型号SUP45N05-20L-E3的Datasheet PDF文件第4页浏览型号SUP45N05-20L-E3的Datasheet PDF文件第5页 
SUP/SUB45N05-20L  
Vishay Siliconix  
N-Channel 50-V (D-S), 175_C MOSFET, Logic Level  
PRODUCT SUMMARY  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)  
0.018 @ V = 10 V  
GS  
a
50  
"45  
0.020 @ V = 4.5 V  
GS  
D
TO-220AB  
TO-263  
G
DRAIN connected to TAB  
G
D S  
Top View  
G D S  
S
SUB45N05-20L  
Top View  
SUP45N05-20L  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
50  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
V
GS  
V
"20  
a
T
= 25_C  
"45  
C
Continuous Drain Current (T = 175_C)  
I
D
J
T
= 125_C  
"32  
"100  
"45  
"45  
100  
C
A
Pulsed Drain Current  
I
DM  
a
Continuous Source Current (Diode Conduction)  
I
S
Avalanche Current  
I
AR  
b
Repetitive Avalanche Energy  
L = 0.1 mH  
E
mJ  
AR  
c
T
= 25_C (TO-220AB and TO-263)  
93  
C
Maximum Power Dissipation  
P
W
D
c
T
A
= 25_C (TO-263)  
3.75  
Operating Junction and Storage Temperature Range  
T , T  
J
-55 to 175  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
d
PCB Mount (TO-263)  
40  
8.0  
1.6  
Junction-to-Ambient  
Junction-to-Case  
R
thJA  
R
thJC  
Free Air (TO-220AB)  
_C/W  
Notes  
a. Package limited.  
b. Duty cycle v 1%.  
c. See SOA curve for voltage derating.  
d. When mounted on 1” square PCB (FR-4 material).  
Document Number: 70948  
S-21855—Rev. B, 14-Oct-02  
www.vishay.com  
2-1  

与SUP45N05-20L-E3相关器件

型号 品牌 获取价格 描述 数据表
SUP50010E VISHAY

获取价格

N-Channel 60 V (D-S) MOSFET
SUP50020E VISHAY

获取价格

N-Channel 60 V (D-S) MOSFET
SUP50020EL VISHAY

获取价格

N-Channel 60 V (D-S) MOSFET
SUP50020EL-GE3 VISHAY

获取价格

Power Field-Effect Transistor, 120A I(D), 60V, 0.0023ohm, 1-Element, N-Channel, Silicon, M
SUP50N03-5M1P VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
SUP50N03-5M1P-GE3 VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
SUP50N06-18 VISHAY

获取价格

Power Field-Effect Transistor, 48A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Met
SUP50N10-21P VISHAY

获取价格

N-Channel 100 V (D-S) MOSFET
SUP50N10-21P_17 VISHAY

获取价格

N-Channel 100 V (D-S) MOSFET
SUP50N10-21P-GE3 VISHAY

获取价格

Power Field-Effect Transistor, 50A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Me