是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 12 weeks |
风险等级: | 2.26 | 雪崩能效等级(Eas): | 281 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 120 A | 最大漏源导通电阻: | 0.0023 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 300 A |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SUP50N03-5M1P | VISHAY |
获取价格 |
N-Channel 30 V (D-S) MOSFET | |
SUP50N03-5M1P-GE3 | VISHAY |
获取价格 |
N-Channel 30 V (D-S) MOSFET | |
SUP50N06-18 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 48A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Met | |
SUP50N10-21P | VISHAY |
获取价格 |
N-Channel 100 V (D-S) MOSFET | |
SUP50N10-21P_17 | VISHAY |
获取价格 |
N-Channel 100 V (D-S) MOSFET | |
SUP50N10-21P-GE3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Me | |
SUP52N20-39P | VISHAY |
获取价格 |
TRANSISTOR 52 A, 200 V, 0.094 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN | |
SUP52N20-39P-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SUP53P06-20 | VISHAY |
获取价格 |
P-Channel 60-V (D-S) MOSFET | |
SUP53P06-20-E3 | VISHAY |
获取价格 |
P-Channel 60-V (D-S) MOSFET |