Datasheet > SUP40N25-60

SUP40N25-60

更新时间： 2024-11-12 06:14:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	90K
描述
N-Channel 250-V (D-S) 175C MOSFET

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SUP40N25-60 数据手册

SUP40N25-60

Vishay Siliconix

New Product

N-Channel 250-V (D-S) 175_C MOSFET

FEATURES

D TrenchFETr Power MOSFETS

D 175_C Junction Temperature

PRODUCT SUMMARY

D New Low Thermal Resistance Package

APPLICATIONS

V_(BR)DSS(V)

r_DS(on)(W)

I_D(A)

Q_g(Typ)

0.060 @ V = 10 V

250

D Industrial

0.064 @ V = 6 V

38.7

TO-220AB

G D

Top View

Ordering Information: SUP40N25-60—E3

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

250

"30

= 25_C

Continuous Drain Current (T = 175_C)

= 125_C

Pulsed Drain Current

Avalanche Current

Repetitive Avalanche Energy

L = 0.1 mH

= 25_C

300

Maximum Power Dissipation

= 25_C

3.75

Operating Junction and Storage Temperature Range

T , T

−55 to 175

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Junction-to-Ambient (PCB Mount)

thJA

thJC

C/W

Junction-to-Case (Drain)

0.5

Notes

a. Duty cycle v 1%.

b. See SOA curve for voltage derating.

c. When mounted on 1” square PCB (FR-4 material).

Document Number: 73132

S-42076—Rev. A, 15-Nov-04

www.vishay.com

12 3 4 5 6

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