是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | MAX220, 3 PIN | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 800 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 1000 V | 最大漏极电流 (Abs) (ID): | 6 A |
最大漏极电流 (ID): | 6 A | 最大漏源导通电阻: | 1.7 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 160 W |
最大脉冲漏极电流 (IDM): | 24 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
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