Datasheet > STU7N105K5

STU7N105K5

更新时间： 2024-11-03 14:57:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	1051K
描述
N沟道1050 V、1.4 Ohm典型值、4 A MDmesh K5功率MOSFET，IPAK封装

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STU7N105K5 数据手册

STP7N105K5

Datasheet

N-channel 1050 V, 1.4 Ω typ., 4 A MDmesh K5 Power MOSFET

in a TO-220 package

Features

TAB

DS(on)

max.

Order code

STP7N105K5

1050 V

2 Ω

4 A

•

Industry’s lowest R_DS(on)x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

TO-220

100% avalanche tested

Zener-protected

D(2, TAB)

Applications

G(1)

•

Switching applications

Description

S(3)

This very high voltage N-channel Power MOSFET is designed using MDmesh K5

technology based on an innovative proprietary vertical structure. The result is a

dramatic reduction in on-resistance and ultra-low gate charge for applications

requiring superior power density and high efficiency.

AM01476v1_tab

Product status link

STP7N105K5

Product summary

Order code

STP7N105K5

Marking

Package

Packing

7N105K5

TO-220

Tube

DS14501 - Rev 1 - November 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...13

中文翻译

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