Datasheet > STU7NA80

STU7NA80

更新时间： 2024-11-01 22:18:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
5页	46K
描述
N - CHANNEL 800V - 1.3ohm - 6.5A - Max220 FAST POWER MOSFET

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STU7NA80 数据手册

STU7NA80

N - CHANNEL 800V - 1.3Ω - 6.5A - Max220

FAST POWER MOSFET

PRELIMINARY DATA

TYPE

V_DSS

R_DS(on)

I_D

STU7NA80

800 V

< 1.5 Ω

6.5 A

■

TYPICAL R_DS(on)= 1.3 Ω

± 30V GATE TO SOURCE VOLTAGE RATING

REPETITIVE AVALANCHE TESTED DATA

AT 100 ^oC

■

LOW INTRINSIC CAPACITANCE

100% AVALANCHE TESTED

GATE CHARGE MINIMIZED

REDUCED THRESHOLD VOLTAGE SPREAD

Max220^TM

DESCRIPTION

The Max220^TMpackage is a new high volume

power package exibiting the same footprint as the

industry standard TO-220, but designed to

accomodate much larger silicon chips, normally

supplied in bigger packages. The increased die

capacity makes the device ideal to reduce

component count in multiple paralleled TO-220

designs and save board space with respect to

larger packages.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITCH MODE POWER SUPPLIES (SMPS)

CONSUMER AND INDUSTRIAL LIGHTING

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES (UPS)

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

V_DGR

V_GS

I_D

Parameter

Value

800

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

800

± 30

6.5

Drain Current (continuous) at T_c= 25 C

I_D

Drain Current (continuous) at T_c= 100 C

4.3

_DM(•)

Drain Current (pulsed)

P_tot

Total Dissipation at T_c= 25 C

145

Derating Factor

1.16

-65 to 150

150

W/^oC

^oC

T_stg

T_j

Storage Temperature

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/5

June 1998

12 3 4 5

中文翻译

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