STU9NC90ZI

更新时间： 2024-09-28 22:17:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
10页	415K
描述
N-CHANNEL 900V - 1.1ohm - 7.6A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET

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STU9NC90ZI 数据手册

STU8NC90Z

STU8NC90ZI

N-CHANNEL 900V - 1.1Ω - 7.6A Max220/I-Max220

Zener-Protected PowerMESH™III MOSFET

TYPE

DSS

DS(on)

STU8NC90Z

STU9NC90ZI

900 V

< 1.38Ω

7 A

■

TYPICAL R (on) = 1.1Ω

EXTREMELY HIGH dv/dt CAPABILITY

GATE-TO-SOURCE ZENER DIODES

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

I-Max220

Max220

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsur-

passed on-resistance per unit area while integrating

back-to-back Zener diodes between gate and

source. Such arrangement gives extra ESD capabil-

ity with higher ruggedness performance as request-

ed by a large variety of single-switch applications.

APPLICATIONS

■

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

WELDING EQUIPMENT

■

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STU8NC90Z

STU8NC90ZI

Drain-source Voltage (V = 0)

900

±25

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

Drain Current (continuos) at T = 25°C

7(*)

4.4(*)

28(*)

Drain Current (continuos) at T = 100°C

4.4

(1)

Drain Current (pulsed)

Total Dissipation at T = 25°C

160

1.28

TOT

Derating Factor

0.44

W/°C

V/ns

Gate-source Current

±50

Gate source ESD(HBM-C=100pF, R=15KΩ)

Peak Diode Recovery voltage slope

Insulation Winthstand Voltage (DC)

Storage Temperature

ESD(G-S)

dv/dt(

●)

ISO

2000

stg

–65 to 150

150

°C

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

(1)I ≤ 7A, di/dt ≤100A/µs, V ≤ V

, T ≤ T

(BR)DSS j JMAX

(*)Limited only by maximum temperature allowed

Sep 2000

1/10

12 3 4 5 6 7...10

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