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STU85N3LH5 PDF预览

STU85N3LH5

更新时间: 2024-11-02 06:14:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC
页数 文件大小 规格书
16页 376K
描述
N-channel 30 V, 0.0042 Ω , 80 A, DPAK, TO-220, IPAK STripFET™ V Power MOSFET

STU85N3LH5 技术参数

是否Rohs认证:符合生命周期:End Of Life
零件包装代码:TO-251包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:6.37
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:222533Samacsys Pin Count:3
Samacsys Part Category:TransistorSamacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:IPAK_5Samacsys Released Date:2015-11-03 12:30:39
Is Samacsys:N其他特性:ULTRA-LOW RESISTANCE
雪崩能效等级(Eas):165 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):80 A最大漏极电流 (ID):80 A
最大漏源导通电阻:0.0071 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251JESD-30 代码:R-PSIP-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):70 W最大脉冲漏极电流 (IDM):320 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn) - annealed
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STU85N3LH5 数据手册

 浏览型号STU85N3LH5的Datasheet PDF文件第2页浏览型号STU85N3LH5的Datasheet PDF文件第3页浏览型号STU85N3LH5的Datasheet PDF文件第4页浏览型号STU85N3LH5的Datasheet PDF文件第5页浏览型号STU85N3LH5的Datasheet PDF文件第6页浏览型号STU85N3LH5的Datasheet PDF文件第7页 
STD85N3LH5  
STP85N3LH5 - STU85N3LH5  
N-channel 30 V, 0.0042 , 80 A, DPAK, TO-220, IPAK  
STripFET™ V Power MOSFET  
Features  
Type  
VDSS  
RDS(on) max  
ID  
3
STD85N3LH5  
STP85N3LH5  
STU85N3LH5  
30 V  
30 V  
30 V  
< 0.005 Ω  
< 0.0054 Ω  
< 0.0054 Ω  
80 A  
80 A  
80 A  
3
1
2
1
DPAK  
IPAK  
R  
* Q industry benchmark  
g
DS(on)  
Extremely low on-resistance R  
High avalanche ruggedness  
Low gate drive power losses  
3
DS(on)  
2
1
TO-220  
Application  
Switching applications  
Figure 1.  
Internal schematic diagram  
Description  
th  
This product utilizes the 5 generation of design  
rules of ST’s proprietary STripFET™ technology.  
The lowest available R  
*Q , in the standard  
DS(on)  
g
packages, makes this device suitable for the most  
demanding DC-DC converter applications, where  
high power density is to be achieved.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STD85N3LH5  
STP85N3LH5  
STU85N3LH5  
85N3LH5  
85N3LH5  
85N3LH5  
DPAK  
TO-220  
IPAK  
Tape and reel  
Tube  
Tube  
September 2008  
Rev5  
1/16  
www.st.com  
16  

STU85N3LH5 替代型号

型号 品牌 替代类型 描述 数据表
STU75N3LLH6 STMICROELECTRONICS

类似代替

N-channel 30 V, 0.0042 Ω, 75 A, DPAK, TO-220
FDU8874 FAIRCHILD

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N-Channel PowerTrench MOSFET 30V, 116A

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