STU9916L

更新时间： 2024-09-29 03:26:07

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
8页	899K
描述
N-Channel Enhancement Mode Field Effect Transistor

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STU9916L 数据手册

STU/D9916L

SamHop Microelectronics Corp.

Preliminary Mar.25 2004

N-Channel Enhancement Mode Field Effect Transistor

PRODUCT SUMMARY

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

VDSS

RDS(ON) ( m

Ω) Max

30@ VGS = 10V

40@ VGS = 4.5V

25A

30V

TO-252 and TO-251 Package.

SDU SERIES

TO-252AA(D-PAK)

SDD SERIES

TO-251(l-PAK)

ABSOLUTE MAXIMUM RATINGS (T =25 C unless otherwise noted)

Limit

Unit

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

Drain Current-Continuous^a@T

-Pulsed^b

= 25 C

Drain-Source Diode Forward Current ^a

Maximum Power Dissipation ^a

Operating Junction and Storage

Temperature Range

, TSTG

-55 to 175

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

C/W

Thermal Resistance, Junction-to-Ambient

12 3 4 5 6 7 8

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