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STU8N65M5 PDF预览

STU8N65M5

更新时间: 2024-11-26 08:58:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
25页 1299K
描述
N-channel 650 V, 0.56 Ω, 7 A MDmesh? V Power MOSFET

STU8N65M5 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-251
包装说明:ROHS COMPLIANT, IPAK-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.77其他特性:ULTRA-LOW RESISTANCE
雪崩能效等级(Eas):120 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:650 V最大漏极电流 (Abs) (ID):7 A
最大漏极电流 (ID):7 A最大漏源导通电阻:0.6 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-251
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):70 W最大脉冲漏极电流 (IDM):28 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STU8N65M5 数据手册

 浏览型号STU8N65M5的Datasheet PDF文件第2页浏览型号STU8N65M5的Datasheet PDF文件第3页浏览型号STU8N65M5的Datasheet PDF文件第4页浏览型号STU8N65M5的Datasheet PDF文件第5页浏览型号STU8N65M5的Datasheet PDF文件第6页浏览型号STU8N65M5的Datasheet PDF文件第7页 
STB8N65M5, STD8N65M5, STF8N65M5  
STI8N65M5, STP8N65M5, STU8N65M5  
N-channel 650 V, 0.56 Ω, 7 A MDmesh™ V Power MOSFET  
in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK  
Features  
Type  
VDSS @ TJmax RDS(on) max. ID  
3
STB8N65M5  
STD8N65M5  
STF8N65M5  
STI8N65M5  
STP8N65M5  
STU8N65M5  
1
3
3
2
2
DPAK  
1
1
TO-220  
710 V  
< 0.6 Ω  
7 A  
TO-220FP  
Worldwide best R  
* area  
DS(on)  
3
3
1
Higher V  
rating  
2
DSS  
3
2
1
1
PAK  
High dv/dt capability  
PAK  
IPAK  
Excellent switching performance  
Easy to drive  
Figure 1.  
Internal schematic diagram  
100% avalanche tested  
$ꢅꢆꢇ  
Applications  
Switching applications  
Description  
'ꢅꢁꢇ  
These devices are N-channel MDmesh™ V  
Power MOSFETs based on an innovative  
proprietary vertical process technology, which is  
combined with STMicroelectronics’ well-known  
PowerMESH™ horizontal layout structure. The  
resulting product has extremely low on-  
3ꢅꢈꢇ  
!-ꢀꢁꢂꢃꢄVꢁ  
resistance, which is unmatched among silicon-  
based Power MOSFETs, making it especially  
suitable for applications which require superior  
power density and outstanding efficiency.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STB8N65M5  
STD8N65M5  
STF8N65M5  
STI8N65M5  
STP8N65M5  
STU8N65M5  
PAK  
DPAK  
Tape and reel  
Tape and reel  
Tube  
TO-220FP  
PAK  
8N65M5  
Tube  
TO-220  
IPAK  
Tube  
Tube  
July 2011  
Doc ID 16531 Rev 3  
1/25  
www.st.com  
25  

STU8N65M5 替代型号

型号 品牌 替代类型 描述 数据表
STI8N65M5 STMICROELECTRONICS

完全替代

N-channel 650 V, 0.56 Ω, 7 A MDmesh? V Power
STU12N65M5 STMICROELECTRONICS

类似代替

N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK
STU5N95K3 STMICROELECTRONICS

类似代替

N-channel 950 V, 3 ohm typ, 4 A Zener-protected SuperMESH3

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