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STU12N65M5 PDF预览

STU12N65M5

更新时间: 2024-10-02 12:27:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
23页 1092K
描述
N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK

STU12N65M5 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-251
包装说明:ROHS COMPLIANT, IPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.82Is Samacsys:N
雪崩能效等级(Eas):150 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:650 V最大漏极电流 (Abs) (ID):8.5 A
最大漏极电流 (ID):8.5 A最大漏源导通电阻:0.43 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-251
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):70 W最大脉冲漏极电流 (IDM):34 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn) - annealed
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STU12N65M5 数据手册

 浏览型号STU12N65M5的Datasheet PDF文件第2页浏览型号STU12N65M5的Datasheet PDF文件第3页浏览型号STU12N65M5的Datasheet PDF文件第4页浏览型号STU12N65M5的Datasheet PDF文件第5页浏览型号STU12N65M5的Datasheet PDF文件第6页浏览型号STU12N65M5的Datasheet PDF文件第7页 
STD12N65M5, STF12N65M5, STI12N65M5  
STP12N65M5, STU12N65M5  
N-channel 650 V, 0.39 , 8.5 A MDmesh™ V Power MOSFET  
DPAK, I2PAK, TO-220FP, TO-220, IPAK  
Features  
VDSS  
TJmax  
@
RDS(on)  
max  
Type  
ID  
PTOT  
3
2
3
1
2
1
STD12N65M5  
STF12N65M5  
STI12N65M5  
STP12N65M5  
STU12N65M5  
8.5 A 70 W  
8.5 A(1) 25 W  
IPAK  
TO-220  
3
710 V < 0.43 8.5 A 70 W  
8.5 A 70 W  
1
DPAK  
8.5 A 70 W  
3
1. Limited only by maximum temperature allowed.  
2
3
2
1
1
Worldwide best R  
* area  
DS(on)  
TO-220FP  
PAK  
Higher V  
rating and high dv/dt capability  
DSS  
Excellent switching performance  
Easy to drive  
100% avalanche tested  
Figure 1.  
Internal schematic diagram  
Applications  
$ꢅꢆꢇ  
Switching applications  
Description  
'ꢅꢁꢇ  
These devices are N-channel MDmesh™ V  
Power MOSFETs based on an innovative  
proprietary vertical process technology, which is  
combined with STMicroelectronics’ well-known  
PowerMESH™ horizontal layout structure. The  
resulting product has extremely low on-  
3ꢅꢈꢇ  
resistance, which is unmatched among silicon-  
based Power MOSFETs, making it especially  
suitable for applications which require superior  
power density and outstanding efficiency.  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Packages  
DPAK  
Packaging  
STD12N65M5  
STF12N65M5  
STI12N65M5  
STP12N65M5  
STU12N65M5  
Tape and reel  
Tube  
TO-220FP  
PAK  
12N65M5  
Tube  
TO-220  
IPAK  
Tube  
Tube  
June 2011  
Doc ID 15428 Rev 5  
1/23  
www.st.com  
23  

STU12N65M5 替代型号

型号 品牌 替代类型 描述 数据表
STI12N65M5 STMICROELECTRONICS

完全替代

N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK
STU5N95K3 STMICROELECTRONICS

类似代替

N-channel 950 V, 3 ohm typ, 4 A Zener-protected SuperMESH3
STU8N65M5 STMICROELECTRONICS

类似代替

N-channel 650 V, 0.56 Ω, 7 A MDmesh? V Power

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