是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-251 |
包装说明: | ROHS COMPLIANT, IPAK-3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.82 | Is Samacsys: | N |
雪崩能效等级(Eas): | 150 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 650 V | 最大漏极电流 (Abs) (ID): | 8.5 A |
最大漏极电流 (ID): | 8.5 A | 最大漏源导通电阻: | 0.43 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-251 |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 70 W | 最大脉冲漏极电流 (IDM): | 34 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) - annealed |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
STI12N65M5 | STMICROELECTRONICS |
完全替代 |
N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK | |
STU5N95K3 | STMICROELECTRONICS |
类似代替 |
N-channel 950 V, 3 ohm typ, 4 A Zener-protected SuperMESH3 | |
STU8N65M5 | STMICROELECTRONICS |
类似代替 |
N-channel 650 V, 0.56 Ω, 7 A MDmesh? V Power |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STU13005N | STMICROELECTRONICS |
获取价格 |
高压快速切换NPN功率晶体管 | |
STU13N60M2 | STMICROELECTRONICS |
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N沟道600 V、0.35 Ohm典型值、11 A MDmesh M2功率MOSFET,I | |
STU13NB60 | STMICROELECTRONICS |
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N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET | |
STU13NC50 | STMICROELECTRONICS |
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N-CHANNEL 500V - 0.31ohm - 13A Max220 PowerMe | |
STU13NM60N | STMICROELECTRONICS |
获取价格 |
N-channel 600 V, 0.28 ohm typ., 11 A MDmesh II Power MOSFET in TO-220FP, I2PAK, TO-220, IP | |
STU14NA50 | STMICROELECTRONICS |
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N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
STU150N3LLH6 | STMICROELECTRONICS |
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N-channel 30 V, 0.0024 ohm , 80 A, DPAK, IPAK, TO-220 | |
STU1530PL | SAMHOP |
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P-Channel E nhancement Mode MOSFET | |
STU16N65M2 | STMICROELECTRONICS |
获取价格 |
N沟道650 V、0.32 Ohm典型值、11 A MDmesh M2功率MOSFET,I | |
STU16N65M5 | STMICROELECTRONICS |
获取价格 |
12A, 650V, 0.279ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3 |