Datasheet > STU26NM60

STU26NM60

更新时间： 2024-11-22 23:35:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
11页	136K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 26A I(D) \| TO-220VAR

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数据手册

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STU26NM60 数据手册

STW26NM60

STU26NM60, STU26NM60I

N-CHANNEL 600V - 0.125

Ω - 26A TO-247,Max220,Max220I

Zener-Protected MDmesh Power MOSFET

TYPE

DS(on)

DSS

STW26NM60

STU26NM60

STU26NM60I

600 V

< 0.135 Ω

30 A

26 A

TYPICAL R (on) = 0.125Ω

HIGH dv/dt AND AVALANCHE CAPABILITIES

IMPROVED ESD CAPABILITY

LOW INPUT CAPACITANCE AND GATE

CHARGE

TO-247

Max220

LOW GATE INPUT RESISTANCE

Max220I

DESCRIPTION

The MDmesh is a new revolutionary MOSFET

technology that associates the Multiple Drain pro-

cess with the Company’s PowerMESH horizontal

layout. The resulting product has an outstanding low

on-resistance, impressively high dv/dt and excellent

avalanche characteristics. The adoption of the

Company’s proprietary strip technique yields overall

dynamic performancethat is significantly better than

that of similar competition’s products.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

The MDmesh family is very suitable for increasing

power density of high voltage converters allowing

system miniaturization and higher efficiencies.

ORDERING INFORMATION

SALES TYPE

STW26NM60

STU26NM60

STU26NM60I

MARKING

W26NM60

U26NM60

U26NM60I

PACKAGE

PACKAGING

TUBE

TO-247

Max220

Max220I

TUBE

February 2002

1/11

12 3 4 5 6 7...11

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